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EMH7600-00MA08GRR Schematic ( PDF Datasheet ) - Elite Semiconductor

Teilenummer EMH7600-00MA08GRR
Beschreibung High Efficiency Synchronous DC/DC Boost Converter
Hersteller Elite Semiconductor
Logo Elite Semiconductor Logo 




Gesamt 17 Seiten
EMH7600-00MA08GRR Datasheet, Funktion
ESMT/EMP
EMH7600
Battery Powered, High Efficiency Synchronous
DC/DC Boost Converter
General Description
EMH7600 is designed with high efficiency step up
DC/DC converter for portable devices applications.
It features with extreme low 26μA quiescent current
with no load which is the best fit for extending
battery life during the standby mode.
The start-up voltage is 0.93V typically with operating
voltage down to 0.7V. With Synchronous structure, it
does not need any external Schottky diode. The
peak current is limited to 1A for quick turn on. The
EMH7600 is available in MSOP-8 package.
This product can provide 500mA load current and
still maintained at least 70% efficiency and above
90% efficiency when at 100mA load current.
The EMH7600 is available in MSOP-8 package, With
RoHS compliance.
Features
„ Single or dual battery operation
„ Achieve 93% efficiency
„ Output Current up to 500mA
„ Reference voltage 1.195V
„ Typical Iq 26μA with no load
„ No Schottky diode needed
„ Shutdown current < 1μA
„ Excellent Line and Load Transient Response
„ On-Chip Low Battery Detector ( MSOP-8
package)
Applications
„ Blue-Tooth devices
„ Cellular and Smart Phones
„ Personal multi-media Player (PMP)
„ Wireless networking
„ Hand-Held Devices with 1 to 3-Cell of
NiMH/NiCd Batteries
„ Digital Still Cameras
„ Portable applications
Typical Application
100.0%
90.0%
80.0%
70.0%
60.0%
50.0%
40.0%
30.0%
20.0%
10.0%
0.0%
0.01
Efficiency vs. Load Current
0.1 1 10 100 1000
Output Current (mA)
Fig. 1
Fig. 2
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : Jun. 2009
Revision : 2.0
1/17






EMH7600-00MA08GRR Datasheet, Funktion
ESMT/EMP
Typical Performance Characteristics
Vin=2.4V, Vout=3.3V unless otherwise specified
EMH7600
LX Switching waveform at no load
LX Switching waveform at heavy load
RDS(ON) vs Input Voltage
Ron vs. Input Voltage
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
Input Voltage (V)
NMOS
PMOS
Exiting Shutdown
Load Transient response
Vref voltage vs temperature
Vref vs. Temperature
1.195
1.194
1.193
1.192
1.191
1.19
1.189
1.188
1.187
1.186
-60 -40 -20 0 20 40 60 80 100 120 140 160
Temperature (℃)
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : Jun. 2009
Revision : 2.0
6/17

6 Page









EMH7600-00MA08GRR pdf, datenblatt
ESMT/EMP
Application (Continued)
EMH7600
Application circuit for adjustable VOUT using formula (R5+R6)/R6*1.195
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : Jun. 2009
Revision : 2.0
12/17

12 Page





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