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Número de pieza | EMP2133 | |
Descripción | 300mA CMOS Linear Regulator | |
Fabricantes | Elite Semiconductor | |
Logotipo | ||
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EMP2133
High-PSRR, Low-Noise, Low-Dropout, 300mA
CMOS Linear Regulator
General Description
The EMP2133 series is a family of dual-channel CMOS
linear regulators featuring ultra-high power supply
rejection ratio (PSRR), low output voltage noise, low
dropout voltage, low quiescent current and fast
transient response. It guarantees delivery of 300mA
output current per regulator, and supports preset
output voltages ranging from 1.2V to 3.3V with 0.1V
increment (except for 1.85V and 2.85V).
The EMP2133 is well suited for portable battery-powered
application which requires high efficiency, low noise
and small board space. With 130mV low dropout
voltage at 300mA output current, EMP2133 sustains high
PSRR at very low input voltage which is common in
battery-powered application. The EMP2133 also
features 110µVRMS low output voltage noise without the
presence of a noise bypass capacitor, which fits the
application where noise and board space are both
concerned.
Each regulator in the EMP2133 can be turned off
independently, further prolonging the battery life.
Internally build-in thermal protection and over-current
protection provide additional safety for the end use.
The EMP2133 is available in miniature SOT-23-6 and
TSOP-6 package.
Typical Application Diagram
Features
Miniature SOT-23-6 package
300mA guaranteed output current
70dB typical PSRR at 1kHz (55dB typical at 10KHz)
110µVRMS output voltage noise (10Hz to 100kHz)
130mV typical dropout at 300mA
150µA typical quiescent current
Less than 1μA typical shutdown mode
Auto-discharge during chip disable
Fast line and load transient response
35µs typical turn-on time
2.5V to 5.5V input range
Stable with small ceramic output capacitors
Over temperature and over current protection
±2% output voltage tolerance
Applications
Wireless handsets
PCMCIA cards
DSP core power
Hand-held instruments
Battery-powered systems
Portable information appliances
Typical Performance Characteristics
PSRR vs. Frequency
EMP2133
Frequency (Hz)
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : Jun. 2009
Revision : 3.0
1/13
1 page ESMT/EMP
TON Turn-On Time
TOFF Turn-Off Time
VOUT at 95% of Final Value
IOUT=0mA (Note 9)
EMP2133
35 µs
2.4 ms
Note 1: Absolute Maximum ratings indicate limits beyond which damage may occur. Electrical specifications are not
applicable when the device is operated outside of its rated operating conditions.
Note 2: All voltages are defined and measured with respect to the potential at the ground pin.
Note 3: Maximum Power dissipation for the device is calculated using the following equations:
PD
=
TJ(MAX)
θJA
-
TA
where TJ(MAX) is the maximum junction temperature, TA is the ambient temperature, and θ JA is the
junction-to-ambient thermal resistance. E.g. for the SOT-23-6 packageθJA = 250°C/W, TJ(MAX) = 150°C and using
TA = 25°C, the maximum power dissipation is found to be 500mW. The derating factor (-1/θJA) = -4mW/°C, thus
below 25°C the power dissipation figure can be increased by 4mW per degree, and similarity decreased by this
factor for temperatures above 25°C.
Note 4: Dropout voltage is measured by reducing VIN until VOUT drops 100mV from its nominal value at VIN -VOUT =1V.
Dropout voltage does not apply to the regulator versions with VOUT less than 2.5V.
Note 5: Human body model: 1.5kΩ in series with 100pF.
Note 6: Condition does not apply to input voltages below 2.5V since this is the minimum input operating voltage.
Note 7: Typical Values represent the most likely parametric norm.
Note 8: For different output voltage, the noise can be approximately calculated using the following formula:
Noise = VOUT × 38 (μVRMS )
Note 9: Turn-off time is time measured between the enable input just decreasing below VIL and the output voltage just
decreasing to 10% of its nominal value.
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : Jun. 2009
Revision : 3.0
5/13
5 Page ESMT/EMP
Old Order, Mark & Packing Information
No. of PIN
6
EN1 EN2 Vout1 Vout2
3.0 3.0
1.8 3.0
1.8 2.8
Y Y 2.5 3.3
2.8 3.3
1.8 3.3
2.85 2.85
Option
00
01
02
03
04
05
06
Old Marking
1300
Date code
1301
Date code
1302
Date code
1303
Date code
1304
Date code
1305
Date code
1306
Date code
EMP2133
Package
3K units Tape & Reel
3K units Tape & Reel
3K units Tape & Reel
3K units Tape & Reel
3K units Tape & Reel
3K units Tape & Reel
3K units Tape & Reel
Elite Semiconductor Memory Technology Inc./Elite MicroPower Inc.
Publication Date : Jun. 2009
Revision : 3.0
11/13
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet EMP2133.PDF ] |
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