PBSS5320T Datasheet PDF - NXP Semiconductors
| Part Number | PBSS5320T | |
| Description | PNP transistor | |
| Manufacturers | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS5320T
20 V, 3 A
PNP low VCEsat (BISS) transistor
Product specification
Supersedes data of 2002 Aug 08
2004 Jan 15
|
| |
 
Philips Semiconductors
20 V, 3 A
PNP low VCEsat (BISS) transistor
1000
handbook, halfpage
hFE
800
600
400
200
MLD876
(1)
(2)
(3)
−010−1
−1
−10
−102
−103
−104
IC (mA)
VCE = −2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.2 DC current gain as a function of collector
current; typical values.
Product specification
PBSS5320T
−1200
handbook, halfpage
VBE
(mV)
−800
−400
MLD877
(1)
(2)
(3)
−010−1
−1
−10
−102
−103
−104
IC (mA)
VCE = −2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
handb−o1ok4,0h0alfpage
VBEsat
(mV)
−1000
−600
MLD878
(1)
(2)
(3)
handb−o1ok4,0h0alfpage
VBEsat
(mV)
−1000
−600
MLD879
(1)
(2)
(3)
−20−010−1
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4 Base-emitter saturation voltage as a
function of collector current; typical values.
−20−010−1
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Jan 15
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for PBSS5320T electronic component. |
| Information | Total 10 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ PBSS5320T.PDF Datasheet ] | |
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