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PDF ELM1314-9F Data sheet ( Hoja de datos )
| Número de pieza | ELM1314-9F | |
| Descripción | Ku-Band Internally Matched FET | |
| Fabricantes | Eudyna | |
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ELM1314-9F
Ku-Band Internally Matched FET
FEATURES
•High Output Power: P1dB=39.5dBm(Typ.)
•High Gain: G1dB=6.0dB(Typ.)
•High PAE: ηadd=30%(Typ.)
•Broad Band: 13.75 to 14.5GHz
•Impedance Matched Zin/Zout = 50ohm
•Hermetically Sealed Package
DESCRIPTION
The ELM1314-9F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50ohm system.
ABSOLUTE MAXIMUM RATINGS
Ite m
Symbol
Drain-Source Voltage (Tc=25deg.C)
Gate-Source Voltage (Tc=25deg.C)
Total Pow er Dissipation
Storage Tem perature
Channel Tem perature
VDS
V GS
PT
Tstg
Tch
Rating
15
-5
35.7
-55 to +125
+175
Unit
V
V
W
deg.C
deg.C
RECOMMENDED OPERATING CONDITION
Ite m
Sym bol
DC Input Voltage
Forw ard Gate Current
Reverse Gate Current
Storage Tem perature
Channel Tem perature
VDS
IGF
IGR
Tstg
Tch
Condition
RG=100 ohm
RG=100 ohm
Recom m end
≤10
≤+19.5
≥-4.3
-55 to +125
≤+155
Unit
V
mA
mA
deg.C
deg.C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)
Ite m
Sym bol
Condition
Lim it
Min. Typ. Max.
Unit
Drain Current
IDSS VDS=5V , VGS=0V
- 4.1 6.2
A
Trans conductance
Pinch-off Voltage
gm VDS=5V , IDS=2A
Vp VDS=5V , IDS=175mA
- 2.9 -
-0.5 -1.5 -3.0
S
V
Gate-Source Breakdow n Voltage
Output Pow er at 1dB G.C.P.
Pow er Gain at 1dB G.C.P.
Drain Current
Pow er-added Efficiency
Gain Flatness
3rd Order Interm odulation
Dis tor tion
V GSO
P1dB
G1dB
Idsr
Nadd
∆G
IM3
IGS=-175uA
VDS=10V
f= 13.75 to 14.5 GHz
IDSDC=1.75A (typ.)
Zs=ZL=50 ohm
f=14.5 GHz
∆f=10MHz，2-tone Test
Pout=33.0dBm (S.C.L.)
-5.0
39.0
5.0
-
-
-
-25
-
39.5
6.0
2.4
30
-
-30
-
-
-
2.8
-
1.2
-
V
dBm
dB
A
%
dB
dBc
Therm al Resistance
Rth Channel to Case
- 3.5 4.2 deg.C/W
Channel Tem perature Rise
CASE STYLE : IA
∆Tch
10V x Idsr X Rth
- - 100 deg.C
S.C.L. : Single Carrier Level G.C.P.: Gain Com pression Point
ESD Class 3A 4000V to 8000V
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5kohm)
RoHS COMPLIANCE
Yes
Edition 1.3
Jul. 2012
1
1 page  
ELM1314-9F
Ku-Band Internally Matched FET
For further information please contact:
http://global-sei.com/Electro-optic/about/office.html
CAUTION
This product contains gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For
safety, observe the following procedures:
・Do not put these products into the mouth.
・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as
these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
・Observe government laws and company regulations when discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste procedures.
Edition 1.3
Jul. 2012
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet ELM1314-9F.PDF ] | |
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