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PDF ELM6472-16F Data sheet ( Hoja de datos )
| Número de pieza | ELM6472-16F | |
| Descripción | C-Band Internally Matched FET | |
| Fabricantes | SUMITOMO | |
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FEATURES
High Output Power: P1dB=42.5dBm (Typ)
High Gain: G1dB=9.5dB (Typ.)
High PAE: add=40 %( Typ.)
Broad Band: 6.4~7.2GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed Package
ELM6472-16F
C-Band Internally Matched FET
DESCRIPTION
The ELM6472-16F is a power GaAs FET that is
internally matched for standard communication bands
to provide optimum power and gain in a 50 system.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25 deg-C)
Item
Symbol
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
PT
TSTG
TCH
RECOMMENDED OPERATING CONDITION
Rating
15
-5
46.9
-65 to +175
175
Item
Symbol
Condition
Limit
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Storage Temperature
Channel Temperature
VDS
IGF
IGR
TSTG
TCH
RG=51 ohm
RG=51 ohm
<10
<+43.0
>-11.0
-55 to +125
155
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25 deg-C)
Item
Drain Current
Trans conductance
Pinch-off Voltage
Gage-Source Breakdown Voltage
Output Power at 1dB G.C.P
Power Gain at 1dB G.C.P
Drain Current
Power added Efficiency
Gain Flatness
3rd Order Inter modulation
Distortion
Rth
Tch
CASE STYLE: I2C
Symbol
Condition
IDSS
gm
VP
VGSO
P1dB
G1dB
Idsr
add
G
IM3
Rth
Tch
VDS=5V, VGS=0V
VDS=5V, IDS=4200mA
VDS=5V, IDS=300mA
IGS=85uA
VDS=10V
IDSDC=2.8A(Typ.)
f=6.4~7.2 GHz
f=7.2GHz
f=10MHz, 2-tone Test
Pout=31.5dBm (S.C.L)
Channel to Case
(VDS x Idsr – Pout + Pin ) x Rth
Min.
-
-
-0.5
-5.0
41.5
8.5
-
-
-
Limit
Typ.
7.6
5
-1.5
-
42.5
9.5
4.0
40
-
-40 -45
- 2.7
--
ESD
Class 3 A 4000-8000V
Max.
11.4
-
-3.0
-
-
-
5.0
-
1.2
-
3.2
100
Unit
V
V
W
deg-C
deg-C
Unit
V
mA
mA
deg-C
deg-C
Unit
A
S
V
V
dBm
dB
A
%
dB
dBc
Deg-C/W
Deg-C
1
1 page  
ELM6472-16F
C-Band Internally Matched FET
Input Power vs. Output Power, Power Added
Efficiency by Temperature
VDS=10V IDS(DC)=2800mA @6.4GHz
44 100
42 80
40 60
38 40
36 20
34
22
24 26 28 30 32 34
Input Power [dBm]
0
36
Tc=-40deg-C Tc=20deg-C Tc=80deg-C
Input Power vs. Output Power, Power Added
Efficiency by Temperature
VDS=10V IDS(DC)=2800mA @7.2GHz
44 100
42 80
40 60
38 40
36 20
34
22
24 26 28 30 32 34
Input Power [dBm]
0
36
Tc=-40deg-C Tc=20deg-C Tc=80deg-C
Input Power vs. Output Power, Power Added
Efficiency by Temperature
VDS=10V IDS(DC)=2800mA @6.8GHz
44 100
42 80
40 60
38 40
36 20
34
22
24 26 28 30 32 34
Input Power [dBm]
0
36
Tc=-40deg-C Tc=20deg-C Tc=80deg-C
5
5 Page 
ELM6472-16F
C-Band Internally Matched FET
For further information please contact:
Sumitomo Electric Device
Innovations, U.S.A., Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: +1 408 232-9500
FAX: +1 408 428-9111
Sumitomo Electric Europe Ltd.
220 Centennial Park,
Elstree WD6 3SL United Kingdom
TEL: +44 (0)20 89538118
FAX: +44 (0)20 89538228
Sumitomo Electric Europe Ltd.
(Italy Branch)
Piazza Don E. Mapelli, 60 - 20099
Sesto San Giovanni, Milano - Italy
TEL: +39-02-496386-01
FAX: +39-02-496386-25
Sumitomo Electric Asia, Ltd.
Room 2624-2637, 26/F.,
Sun Hung Kai Centre,
30 Harbour Road, Wanchai,
Hong Kong
TEL: +852-2576-0080
FAX: +852-2576-6412
Sumitomo Electric Device
Innovations, Inc.
1000 Kamisukiahara, showa-cho
Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
TEL +81-55-275-4411
FAX +81-55-275-9461
Sumitomo Electric Industries, Ltd.
Head Office (Tokyo)
3-9-1, Shibaura, Minato-ku, Tokyo
108-8539, Japan
TEL +81-3-6722-3283
FAX +81-3-6722-3284
CAUTION
Sumitomo Electric Device Innovations, Inc. products
contain gallium arsenide (GaAs) which can be hazardous
to the human body and the environment. For safety,
observe the following procedures:
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder,
or liquid through burning, crushing, or chemical
processing as these by products are dangerous to the
human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations
when discarding this product. This product must be
discarded in accordance with methods specified by
applicable hazardous waste procedures.
Sumitomo Electric Device Innovations, Inc. reserves the
right to change products and Specifications without notice.
The information does not convey any license under rights of
Sumitomo Electric Device Innovations, Inc. or others.
© 2009 Sumitomo Electric Device Innovations, Inc.
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet ELM6472-16F.PDF ] | |
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