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PDF ELM7785-4PS Data sheet ( Hoja de datos )
| Número de pieza | ELM7785-4PS | |
| Descripción | C-Band Internally Matched FET | |
| Fabricantes | SUMITOMO | |
| Logotipo |  |
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ELM7785-4PS
C-Band Internally Matched FET
FEATURES
High Output Power: P1dB=36.0dBm (Typ.)
High Gain: G1dB=10.0dB (Typ.)
High PAE: ηadd=34% (Typ.)
Broad Band: 7.7~8.5GHz
Internally matched
Plastic Package for SMT applications
DESCRIPTION
The ELM7785-4PS is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 deg-C)
Item
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
PT
TSTG
TCH
15
-5
27.3
-40 to +125
175
Unit
V
V
W
deg-C
deg-C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 deg-C)
Item
Symbol
Condition
Limit
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Channel Temperature
VDS
IGF
IGR
TCH
RG=100 ohm
RG=100 ohm
<10
<+16
>-2.2
155
Unit
V
mA
mA
deg-C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg-C)
Item
Symbol
Condition
Drain Current
Trans conductance
Pinch-off Voltage
Gage-Source
Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power Added Efficiency
Gain Flatness
3rd Order Inter Modulation
Distortion
Rth
∆Tch
IDSS
gm
VP
VGSO
P1dB
G1dB
Idsr
ηadd
∆G
IM3
Rth
∆Tch
VDS=5V, VGS=0V
VDS=5V, IDS=1100mA
VDS=5V, IDS=85mA
IGS=85uA
VDS=10V
IDS(DC)=0.65IDSS(typ.)
f=7.7~8.5 GHz
f=8.5GHz
∆f=10MHz, 2-tone Test
Pout=25.5dBm (S.C.L)
Channel to Case
10V x Idsr x Rth
Min.
-
-
-0.5
-5.0
35.0
8.5
-
-
-
-40
-
-
Limit
Typ.
1700
1700
-1.5
Max.
2600
-
-3.0
--
36.0
10.0
1100
34
-
-
-
1300
-
1.2
-43 -
4.5 5.5
- 71.5
Unit
mA
mS
V
V
dBm
dB
mA
%
dB
dBc
Deg-C/W
Deg-C
1
1 page  
ELM7785-4PS
C-Band Internally Matched FET
Input Power vs. Output Power, Power Added
Efficiency by Quiescent Drain Current
VDS=10V @7.7GHz
38 60
36 50
34 40
32 30
30 20
28 10
26
17
19 21 23 25 27
Input Power [dBm]
0
29
700mA
900mA
1100mA
Input Power vs. Output Power, Power Added
Efficiency by Quiescent Drain Current
VDS=10V @8.1GHz
38 60
36 50
34 40
32 30
30 20
28 10
26
17
19 21 23 25 27
Input Power [dBm]
0
29
700mA
900mA
1100mA
Input Power vs. Output Power, Power Added
Efficiency by Quiescent Drain Current
VDS=10V @8.5GHz
38 60
36 50
34 40
32 30
30 20
28 10
26
17
19 21 23 25 27
Input Power [dBm]
0
29
700mA
900mA
1100mA
5
5 Page 
Package Outline
4
5
6
7
ELM7785-4PS
C-Band Internally Matched FET
3
2
1
Co Planarity
Pin Assignments
1 : NC
2 : Gate
3 : NC
4 : NC
5 : Drain
6 : NC
7 : Source
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet ELM7785-4PS.PDF ] | |
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