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PDF P9NK90Z Data sheet ( Hoja de datos )
| Número de pieza | P9NK90Z | |
| Descripción | STP9NK90Z | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STB9NK90Z, STF9NK90Z
STP9NK90Z, STW9NK90Z
N-channel 900 V, 1.1 Ω, 8 A, TO-220, TO-220FP, D2PAK, TO-247
Zener-protected SuperMESH™ Power MOSFET
Features
Type
STB9NK90Z
STW9NK90Z
STP9NK90Z
STF9NK90Z
VDSS
900V
RDS(on)
max.
ID
<1.3Ω 8A
Pw
160 W
160 W
160 W
40 W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
Application
■ Switching applications
Description
The SuperMESH™ series is obtained through an
optimization of STMicroelectronics’ well-
established strip-based PowerMESH™ layout. In
addition to pushing on-resistance significantly
lower, it also ensures very good dv/dt capability
for the most demanding applications. This series
complement STs’ full range of high voltage power
MOSFETs.
Table 1. Device summary
Order codes
STB9NK90Z
STF9NK90Z
STP9NK90Z
STW9NK90Z
Marking
B9NK90
F9NK90Z
P9NK90Z
W9NK90Z
3
2
1
TO-220
3
1
D²PAK
3
2
1
TO-247
3
2
TO-220FP1
Figure 1. Internal schematic diagram
D(2)
G(1)
Package
D²PAK
TO-220FP
TO-220
TO-247
S(3)
AM01476v1
Packaging
Tape and reel
Tube
May 2010
Doc ID 9479 Rev 7
1/17
www.st.com
17
1 page  
STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise Time
Turn-off delay time
Fall time
Test conditions
Min. Typ. Max. Unit
VDD = 450 V, ID = 4 A,
22 ns
--
RG = 4.7 Ω, VGS = 10 V 13 ns
Figure 19
Figure 24
55 ns
--
28 ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ. Max Unit
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, VGS=0
ISD = 8 A,
di/dt = 100 A/µs,
VDD = 50 V, Tj = 150 °C
Figure 21
-
-
-
8
32
1.6
950
10
21
A
A
V
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Table 9.
Symbol
Gate-source Zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO Gate-source breakdown voltage IGS = ±1 mA(open drain) 30 - V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 9479 Rev 7
5/17
5 Page 
STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z
Table 10. TO-220FP mechanical data
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
2.9
15.9
9
3
Figure 25. TO-220FP drawing
L7
A
B
Dia
L6
H
Package mechanical data
mm
Typ.
16
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
E
D
L5
F1 F2
F
G
G1
L2
L3
Doc ID 9479 Rev 7
L4
7012510_Rev_K
11/17
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet P9NK90Z.PDF ] | |
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