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Número de pieza | 2SC1972 | |
Descripción | silicon NPN epitaxial planar type transistor | |
Fabricantes | Eleflow | |
Logotipo | ||
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No Preview Available ! Description
The Eleflow 2SC1972 is a silicon NPN epitaxial planar type transistor designed
for RF power amplifiers within the VHF band, ideal for mobile radio applications.
Features
• High power gain: Gpe ≥ 7.5dB
@Vcc = 13.5V, Po = 14W, f = 175MHz
• Emitter ballasted construction for reliability and performance.
• Manufactured incorporating recyclable RoHS compliant materials.
• Ability to periodically withstand in excess of 20:1 VSWR load when
operated at Vcc = 15.2V, Po = 18W, f = 175MHz.
Application
10 to 14 watts output power amplifier applications within the VHF band.
2SC1972
TO-220 Package
Absolute Maximum Ratings (Tc = 25°C unless otherwise specified)
Symbol
Parameter
Conditions
Vcbo
Vebo
Veco
Ic
Pc
Tj
Tstg
Rth-a
Rth-c
Collector to base voltage
Emitter to base voltage
Collector to emitter voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Thermal resistance
Rbe =
Ta = 25°C
Tc = 25°C
Junction to ambient
Junction to case
Note: Above parameters are guaranteed independently
Ratings
35
4
17
3.5
1.5
25
175
-55 to 175
100
6
Unit
V
V
V
A
W
W
°C
°C
°C/W
°C/W
Electrical Characteristics (Tc = 25°C unless otherwise specified)
Symbol
Parameter
V(BR)ebo
V(BR)cbo
V(BR)ceo
Icbo
Iebo
hfe
Po
ηc
Emitter to base breakdown voltage
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC forward current gain*
Output power
Collector efficiency
Test Conditions
Limits
Min Typ Max
Ie = 10mA, Ic = 0
4
Ic = 10mA, Ie = 0
35
Ic = 50mA, Rbe =
17
Vcb = 25V, Ie = 0
1000
Veb = 3V, Ic = 0
500
Vce = 10V, Ic = 100mA
10 50 180
Vcc = 13.5V, Pin = 2.5W, F 14
15
= 175MHz
60 70
Unit
V
V
V
µA
µA
W
%
Note: *Pulse test, Pw = 150µS, duty = 5%
Above parameters, ratings, limits and conditions are subject to change
______________________________________________________________________________________________________
www.eleflow.co.uk
All Rights Reserved
Specifications are subject to change without notification.
©Copyright 2010 Eleflow Technologies
1 of 2 03/2010
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2SC1972.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SC1970 | NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) | Mitsubishi Electric Semiconductor |
2SC1970 | Silicon NPN Power Transistor | Inchange Semiconductor |
2SC1971 | NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) | Mitsubishi Electric Semiconductor |
2SC1971 | Silicon NPN Power Transistor | Inchange Semiconductor |
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