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Teilenummer | WPM2341 |
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Beschreibung | P-Channel Enhancement Mode Mosfet | |
Hersteller | SEMIWILL | |
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Gesamt 3 Seiten TM
P-Channel Enhancement Mode Mosfet
WPM2341
FEATURES
• Higher Efficiency Extending Battery Life
• Miniature SOT23-3 Surface Mount Package
• Super high density cell design for extremely low RDS (ON)
APPLICATIONS
• DC/DC Converter
• Load Switch
• Battery Powered System
• LCD Display inverter
• Power Management in Portable, Battery Powered Products
SOT23-3 PACKAGE
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction) a
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TA=25°C
TA=80°C
TA=25°C
TA=80°C
a. Surface Mounted on FR4 Board using 1 in sq pad size,2oz Cu.
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
5 s Steady State
-20
±8
-4.3 -3.5
-3.2 -2.5
-20
-1.7 -1
1.25 0.75
0.7 0.42
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient Thermal Resistance b
t≤5 s
Steady State
b. Surface Mounted on FR4 Board using 1 in sq pad size, 2oz Cu.
Symbol
RθJA
Typical
75
125
Maximum
100
165
Unit
°C/W
REV.2011.05.11
Page 1
www.semiwill.com
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Seiten | Gesamt 3 Seiten | |
PDF Download | [ WPM2341 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
WPM2341 | P-Channel Enhancement Mode Mosfet | SEMIWILL |
WPM2341 | P-Channel Enhancement Mode Mosfet | WillSEMI |
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