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8N80C Schematic ( Datenblatt PDF ) - Fairchild Semiconductor

Teilenummer 8N80C
Beschreibung FQP8N80C
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 

Gesamt 11 Seiten
		
8N80C Datasheet, Funktion
December 2013
FQP8N80C / FQPF8N80C / FQPF8N80CYDTU
N-Channel QFET® MOSFET
800 V, 8.0 A, 1.55
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
8.0 A, 800 V, RDS(on) = 1.55 (Max.) @ VGS = 10 V,
ID = 4.0 A
• Low Gate Charge (Typ. 35 nC)
• Low Crss (Typ. 13 pF)
• 100% Avalanche Tested
D
GDS
TO-220 GDS
D
G
TO-220F
S
G
TO-220F
Y-formed
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQP8N80C FQPF8N80C
800
8 8*
5.1 5.1 *
32 32 *
± 30
850
8
17.8
4.5
178 59
1.43 0.48
-55 to +150
300
S
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink Typ, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQP8N80C
0.89
0.5
62.5
FQPF8N80C
2.66
--
62.5
Unit
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1
1
www.fairchildsemi.com






8N80C Datasheet, Funktion
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
IG = co3nmsAt.
DUT
Charge
Figure 12. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
V1G0GVSS
tp
VDS
ID
RG
L
EAS = --21-- L IAS2
------B--V--D--S-S-------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2003 Fairchild Semiconductor Corporation
FQP8N80C / FQPF8N80C / FQPF8N80CYDTU Rev. C1
6
www.fairchildsemi.com

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