(PDF) WNM2025 Datasheet - N-Channel MOSFET

Número de pieza	WNM2025
Descripción	N-Channel MOSFET
Fabricantes	TY Semiconductor
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Hay una vista previa y un enlace de descarga de WNM2025 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas
No Preview Available ! VDS (V) 20 Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 0.036@ VGS=1.8V Descriptions The WNM2025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2025 is Pb-free. Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23-3L Applications Product specification WNM2025 Single N-Channel, 20V, 3.9 A, Power MOSFET SOT-23-3L D 3 12 GS Pin configuration (Top view) 3 W25* 12 W25= Device Code * = Month (A~Z) Marking Order information z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging Device Package Shipping WNM2025-3/TR SOT-23-3L 3000/Reel&Tape http://www.twtysemi.com [email protected] 1 of 3 1 page

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PDF WNM2025 Data sheet ( Hoja de datos )