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Número de pieza | WNM2024 | |
Descripción | N-Channel MOSFET | |
Fabricantes | TY Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de WNM2024 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! VDS (V)
20
Rds(on) (Ω)
0.027@ VGS=4.5V
0.031@ VGS=2.5V
0.036@ VGS=1.8V
Descriptions
The WNM2024 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, power switch and charging circuit.
Standard Product WNM2024 is Pb-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23
Applications
Product specification
WNM2024
Single N-Channel, 20V, 3.9A, Power MOSFET
SOT-23
D
3
12
GS
Pin configuration (Top view)
3
W24*
12
W24= Device Code
* = Month (A~Z)
Marking
Order information
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
Device
WNM2024-3/TR
Package
SOT-23
Shipping
3000/Reel&Tape
http://www.twtysemi.com
1 of 3
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet WNM2024.PDF ] |
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