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PDF WNM2021 Data sheet ( Hoja de datos )
| Número de pieza | WNM2021 | |
| Descripción | N-Channel Small Signal MOSFET | |
| Fabricantes | Will Semiconductor | |
| Logotipo |  |
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WNM2021
N-Channel, 20V, 0.89A, Small Signal MOSFET
VDS (V)
20
Rds(on) (Ω)
0.220@ VGS=4.5V
0.260@ VGS=2.5V
0.320@ VGS=1.8V
ID (A)
0.55
0.45
0.35
Descriptions
The WNM2021 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, load switch and level shift.
Standard Product WNM2021 is Pb-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance
z Extremely Low Threshold Voltage
z Small package SOT-323
WNM2021
Http//:www.willsemi.com
SOT-323
D
3
12
GS
Pin configuration (Top view)
3
21*
12
21 = Device Code
* = Month (A~Z)
Marking
Applications
z DC-DC converter circuit
z Small Signal Switch
z Load Switch
z Level Shift
z
Order information
Device
WNM2021-3/TR
Package
SOT-323
Shipping
3000/Reel&Tape
Will Semiconductor Ltd. 1 Dec, 2010 - Rev.1.0
1 page  
WNM2021
60 0.8
VGS=0V
50 F=1MHz
0.6
40
Ciss
30
Coss
Crss
0.4
T=150oC
T=25oC
20
10 0.2
0
0 2 4 6 8 10
VDS Drain-to-Source Voltage (V)
Capacitance
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VSD-Source-to-Drain Voltage(V)
Body diode forward voltage
10
1
0.1 Limited by RDS(on)
0.01
10 ms
100 ms
1s
10 s
DC
0.001
TA = 25 °C
Single Pulse
0.1 1 10
VDS - Drain-to-Source Voltage (V)
Safe operating power
100
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 325 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Transient thermal response (Junction-to-Ambient)
100 600
Will Semiconductor Ltd. 5 Dec, 2010 - Rev.1.0
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet WNM2021.PDF ] | |
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