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Teilenummer | P10NK80ZFP |
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Beschreibung | STP10NK80ZFP | |
Hersteller | ST Microelectronics | |
Logo | ||
Gesamt 11 Seiten STP10NK80Z - STP10NK80ZFP
STW10NK80Z
N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247
Zener-Protected SuperMESH™Power MOSFET
TYPE
VDSS RDS(on)
ID
Pw
STP10NK80Z
800 V < 0.90 Ω 9 A 160 W
STP10NK80ZFP 800 V < 0.90 Ω 9 A 40 W
STW10NK80Z
800 V < 0.90 Ω 9 A 160 W
s TYPICAL RDS(on) = 0.78 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
TO-220
3
2
1
TO-220FP
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES
s DC-AC CONVERTERS FOR WELDING, UPS
AND MOTOR DRIVE
ORDERING INFORMATION
SALES TYPE
MARKING
STP10NK80Z
P10NK80Z
STP10NK80ZFP
P10NK80ZFP
STW10NK80Z
W10NK80Z
February 2003
PACKAGE
TO-220
TO-220FP
TO-247
PACKAGING
TUBE
TUBE
TUBE
1/11
STP10NK80Z - STP10NK80ZFP - STW10NK80Z
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
Maximum Avalanche Energy vs Temperature
6/11
6 Page | ||
Seiten | Gesamt 11 Seiten | |
PDF Download | [ P10NK80ZFP Schematic.PDF ] |
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