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PDF P11NB40FP Data sheet ( Hoja de datos )
| Número de pieza | P11NB40FP | |
| Descripción | STP11NB40FP | |
| Fabricantes | STMicroelectronics | |
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Hay una vista previa y un enlace de descarga de P11NB40FP (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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STP11NB40
® STP11NB40FP
N - CHANNEL 400V - 0.48Ω - 10.7A - TO-220/TO-220FP
PowerMESH™ MOSFET
TYPE
VDSS
R DS( on)
ID
ST P11NB4 0
400 V
ST P11NB4 0FP 400 V
<0 .55 Ω
<0 .55 Ω
10 .7 A
6.0 A
s TYPICAL RDS(on) = 0.48 Ω
s EXTREMELY HIGH dV/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Sy mb ol
Parameter
V a l ue
Un it
ST P11NB4 0 STP11NB 40F P
V DS
V DGR
VGS
ID
ID
IDM (•)
Pto t
Dr ai n-sour ce Voltage (VGS =0 )
Drain- gate Volt age (RGS =2 0 kΩ)
G ate-so urc e Vo ltage
Dra in Curre nt (co ntinuous) at Tc =2 5 oC
Dra in Curre nt (co ntinuous) at Tc =1 00 oC6
Drain Curren t (pu lsed)
T ota l Dissipation at Tc =2 5 oC
Dera ting Factor
10. 7
.7
42. 8
125
1.0
400
40 0
± 30
6. 0
3.8
4 2. 8
40
0.32
V
V
V
A
A
A
W
W /o C
dv /dt (1) Peak Dio de Rec overy volt age slop e
4.5 4.5 V/ns
VISO I nsu lat ion W ithst and Voltage (DC)
Tst g Stor age Tempe rat ure
Tj Max. Operating Junc tion Tempe rature
(•) Pulse width limited by safe operating area
20 00
-65 to 150
1 50
( 1)I SD ≤ 10.7A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,T j ≤ TJMAX
V
oC
oC
September 1998
1/9
http://www.Datasheet4U.com
1 page  
Gate Charge vs Gate-source Voltage
Capacitance Variations
STP11NB40/FP
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet P11NB40FP.PDF ] | |
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