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PDF AUIRGU4045D Data sheet ( Hoja de datos )
| Número de pieza | AUIRGU4045D | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | IRF | |
| Logotipo |  |
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AUTOMOTIVE GRADE
PD - 97637
AUIRGR4045D
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5µs SCSOA
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (on) Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free, RoHS Compliant
• Automotive Qualified*
AUIRGU4045D
C
G
E
n-channel
VCES = 600V
IC = 6.0A, TC = 100°C
VCE(on) typ. = 1.7V
C
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI
E
G
D-Pak
AUIRGR4045D
E
C
I-Pak G
AUIRGU4045D
G
Gate
C
Colletor
E
Emitter
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress rati ngs only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may af ect device reliability. The thermal resistance and power dissipation ratin gs are measured under
board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified.
Parameter
VCES
IC@ TC = 25°C
IC@ TC = 100°C
ICM
ILM
IF@TC=25°C
IF@TC=100°C
IFM
VGE
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
cPulsed Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
dDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC =25°
PD @ TC =100°
TJ
TSTG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
eRθJC Junction-to-Case - IGBT
eRθJC Junction-to-Case - Diode
gRθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Max.
600
12
6.0
18
24
8.0
4.0
24
± 20
± 30
77
39
-55 to + 175
Units
V
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
Min.
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
Max. U
1.9
6.8
50
110
nits
°C/W
*Qualification standards can be found at http://www.irf.com/
1
www.irf.comhttp://www.Datasheet4U.com
02/14/11
1 page  
20
Top VGE = 18V
VGE = 15V
VGE = 12V
15 VGE = 10V
Bottom VGE = 8.0V
10
5
0
0 2 4 6 8 10
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80µs
10
8
6 ICE = 3.0A
ICE = 6.0A
4 ICE = 12A
2
0
5 10 15
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
10
20
8
ICE = 3.0A
6 ICE = 6.0A
ICE = 12A
4
2
0
5 10 15 20
VGE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
www.irf.com
AUIRGR/U4045D
20
18
16
14
12
10
8
6
4
2
0
0.0
-40°C
25°C
175°C
1.0 2.0
VF (V)
3.0
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
10
8
6 ICE = 3.0A
ICE = 6.0A
4 ICE = 12A
2
0
5 10 15 20
VGE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
20
18 TJ = 25°C
16 TJ = 175°C
14
12
10
8
6
4
2
0
4 6 8 10 12 14 16
VGE, Gate-to-Emitter Voltage (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
5
5 Page 
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
AUIRGR/U4045D
D-Pak Part Marking Information
Part Number
IR Logo
AUGR4045D
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
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