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What is RFPA2189?

This electronic component, produced by the manufacturer "RF Micro Devices", performs the same function as "GaAs HBT POWER AMPLIFIER".


RFPA2189 Datasheet PDF - RF Micro Devices

Part Number RFPA2189
Description GaAs HBT POWER AMPLIFIER
Manufacturers RF Micro Devices 
Logo RF Micro Devices Logo 


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RFPA2189
GaAs HBT
Power Ampli-
fier 0.5W,
400MHz to
2700 MHz
RFPA2189
GaAs HBT POWER AMPLIFIER
0.5W, 400MHz to 2700MHz
Package: SOT-89
GND
4
Features
-60dBc ACPR at 16dBm WCDMA
0.5W Output Power (P1dB)
Excellent Linearity to DC Power
Ratio
NF=3.0dB at 880MHz
Single-Supply 5V Operation
Class 1C (1000V) HBM ESD
Applications
GaAs Pre-Driver for Base Station
Amplifiers
PA Stage for Commercial
Wireless Infrastructure
2nd or 3rd Stage LNAs
Class AB Operation for GSM,
DCS, PCS, UMTS, WiMAX, LTE
Transceiver Applications
1
RFIN
23
GND RFOUT/VCC
Functional Block Diagram
Product Description
The RFPA2189 is a single-stage GaAs HBT power amplifier specifically designed for
Wireless Infrastructure applications. It offers ultra-linear operation at a comparably
low DC power making it ideal for next generation radios requiring high efficiency. Its
external matching allows for use across various radio platforms within 400 MHz to
2700MHz. The RFPA2189 offers low noise figure making it an excellent solution for
2nd and 3rd stage LNAs.
DS110420
Ordering Information
RFPA2189SR
7” Reel with 100 pieces
RFPA2189SQ
Sample bag with 25 pieces
RFPA2189TR7
7” Reel with 2500 pieces
RFPA2189PCK-410 869MHz to 894MHz PCBA with 5-piece sample bag
RFPA2189PCK-411 2110MHz to 2170MHz PCBA with 5-piece sample bag
Optimum Technology Matching® Applied
GaAs HBT
SiGe BiCMOS
GaAs pHEMT
GaN HEMT
GaAs MESFET
Si BiCMOS
Si CMOS
BiFET HBT
InGaP HBT
SiGe HBT
Si BJT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RFPA2189 equivalent
RFPA2189
GND
J1
RFIN
R3
2K Ω
Evaluation Board Schematic
869MHz to 894MHz Application Circuit
VCC
C1
10uF
P1
1
VCC 2
HDR_1X2
C6
10pF
L3
3.3nH R2
160 Ω
4
U1
RFIN GND RFOUT
1 23
C3
0.1uF
C4
1000pF
C5
10pF
L1
24nH
GND
L2
56nH
L4
2.2nH
C8
56pF
C7
3.9pF
J2
RFOUT
R4
3.9K Ω
Evaluation Board Bill of Materials (BOM)
Description
869MHz to 894MHz Application Circuit
Reference Designator
Manufacturer
PCB
GaAs HBT Power Amplifier
U1
RFMD
CAP, 10uF, 20%, 10V, TANT-A
C1
Kemet
CAP, 1000pF, 10%, 50V, X7R, 0603
C4
Panasonic
CAP, 0.1uF, 10%, 16V, X7R, 0603
C3
Murata Electronics
CAP, 10pF, 5%, 50V, C0G, 0603
C5
Johanson Technology
CAP, 10pF, 5%, 50V, C0G, 0402
C6
Murata Electronics
CAP, 3.9pF, +/-0.25pF, 50V, C0G, 0402
C7
Murata Electronics
CAP, 56pF, 5%, 50V, C0G, 0402
C8
Murata Electronics
CONN, SMA, END LNCH, MINI, FLT, 0.068" J1, J2
Emerson Networks
IND, 24nH, 5%, W/W, 0603
L1
Coilcraft, Inc.
IND, 56nH, 5%, M/L, 0402
L2
TOKO
IND, 3.3nH, +/- 0.3nH, M/L, 0603
L3
TOKO
IND, 2.2nH, +/-0.3nH, M/L, 0603
L4
TOKO
CONN, HDR, ST, PLRZD, 2-PIN, 0.100"
P1
ITW Pancon
RES, 160, 5%, 1/16W, 0402
RES, 2K, 5%, 1/16W, 0402
R2
R3
Kamaya, Inc
Panasonic
RES, 3.9K, 5%, 1/16W, 0402
R4
Panasonic
DNP R1, C2, J3, J4
Manufacturer's P/N
PA2189410(A)
RFPA2189
T491A106M010AT
ECJ-1VB1H102K
GRM188R71C104KA01D
500R14N100JV4
GRM1555C1H100JZ01E
GRM1555C1H3R9CZ01E
GRM1555C1H560JZ01D
142-0741-851
0603HC-24NXJLW
LL1005-FHL56NJ
LL1608-FSL3N3S
LL1608-FSL2N2S
MPSS100-2-C
RMC1/16S-161JTH
ERJ-2GEJ202
ERJ-2GEJ392
DS110420
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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Featured Datasheets

Part NumberDescriptionMFRS
RFPA2189The function is GaAs HBT POWER AMPLIFIER. RF Micro DevicesRF Micro Devices

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