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PDF CGHV27030S Data sheet ( Hoja de datos )

Número de pieza CGHV27030S
Descripción GaN HEMT
Fabricantes CREE　
Logotipo CREE Logotipo



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CGHV27030S
30 W, DC - 6.0 GHz, GaN HEMT
The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility
transistor (HEMT) which offers high efficiency, high gain and wide bandwidth
capabilities. The CGHV27030S GaN HEMT devicesare ideal for telecommunications
applications with frequencies of 700-960 MHz, 1200-1400 MHz, 1800-2200 MHz,
2500-2700 MHz, and 3300-3700 MHz at both 50 V
CGHV27030S is also ideal for tactical communications
and 28 V operations.
applications operating
The
from
20-25P0a0ckaPgNe :TyCpGeH:V32x740D30FSN
MHz, including land mobile radios. Additional applications include L-Band RADAR and S-Band RADAR. The
CGHV27030S can operate with either a 50 V or 28 V rail. The transistor is available in a 3mm x 4mm, surface mount,
dual-flat-no-lead (DFN) package.
Typical Performance 2.5-2.7 GHz (TC = 25˚C) , 50 V
Parameter
2.5 GHz
2.6 GHz
Small Signal Gain
23.0
22.0
2.7 GHz
21.4
Units
dB
Adjacent Channel Power @ POUT =5 W
-34.5
-36.5
-37.0
dBc
Drain Efficiency @ POUT = 5 W
29.5
31.5
32.9
%
Input Return Loss
13.4
9.5
10.4
dB
Note:
Measured in the CGHV27030S-TB1 application circuit, under 7.5 dB PAR single carrier WCDMA signal test model 1
with 64 DPCH.
Features for 50 V in CGHV27030S-TB1
• 2.5 - 2.7 GHz Operation
• 30 W Typical Output Power
• 21 dB Gain at 5 W PAVE
• -36 dBc ACLR at 5 W PAVE
• 32% efficiency at 5 W PAVE
• High degree of APD and DPD correction can be applied
Listing of Available Hardware Application Circuits / Demonstration Circuits
Application Circuit
CGHV27030S-TB1
CGHV27030S-TB2
CGHV27030S-TB3
CGHV27030S-TB4
CGHV27030S-TB5
Operating Frequency
2.5 - 2.7 GHz
2.5 - 2.7 GHz
1.8 - 2.2 GHz
1.8 - 2.2 GHz
1.2 - 1.4 GHz
Amplifier Class
Class A/B
Class A/B
Class A/B
Class A/B
Class A/B
Subject to change without notice.
www.cree.com/RF
Operating Voltage
50 V
28 V
28 V
50 V
50 V
1
http://www.Datasheet4U.com

1 page




CGHV27030S pdf
Source and Load Impedances for Application Circuit CGHV27030S-TB1
Z Source
G
D
Z Load
S
Frequency (MHz)
2500
2600
2700
Z Source
2.2 - j0.7
2.8 - j1.1
2.5 - j1.7
Z Load
10.9 + j15.7
11.5 + j16.7
12.1+j17.7
Note1: VDD = 50 V, IDQ = 0.13 A in the DFN package.
Note2: Impedances are extracted from the CGHV27030S-TB1 application
circuit and are not source and load pull data derived from the transistor.
CGHV27030S-TB1 Bill of Materials
CGHV27030S -TB1 Application Circuit
Designator
R1, R2
C1
C2, C3, C4
C5, C11, C15
C6, C16
C7, C17
C18
C8
C19
J1, J2
J3
PCB
Q1
Description
RES, 22.6, OHM, +/-1%, 1/16W, 0603
CAP, 3.3 pF, ±0.1 pF, 0603, ATC
CAP, 0.7 pF, ±0.05 pF, 0603, ATC
CAP, 8.2 pF, ±0.25 pF, 0603, ATC
CAP, 470 pF, 5%, 100 V, 0603
CAP, 33000 pF, 0805, 100 V, 0603, X7R
CAP, 1.0 UF, 100 V, 10%, X7R, 1210
CAP, 10 UF 16 V TANTALUM
Qty
2
1
3
3
2
2
1
1
CAP, 33 UF, 20%, G CASE
CONN, SMA, PANEL MOUNT JACK, FLANGE,
4-HOLE, BLUNT POST
HEADER RT>PLZ .1CEN LK 5 POS
PCB, ROGERS 4350, ER 3.66
CGHV27030S, QFN
1
2
1
1
1
Copyright © 2013 - 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc.
5 CGHV27030S Rev 0.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf

5 Page





CGHV27030S arduino
Electrical Characteristics When Tested in CGHV27030S-TB3, 28 V, 1.8 - 2.2 GHz
Parameter
Small Signal Gain
1.8 GHz
19
2.0 GHz
19
2.2 GHz
18
Adjacent Channel Power @ POUT =3.2 W
-37
-38
-39
Drain Efficiency @ POUT = 3.2 W
35
35
33
Input Return Loss
567
Note:
Measured in the CGHV27030S-TB2 application circuit.
Figure 7. - Small Signal Gain and Return Losses vs Frequency
VDD = 28 V, IDQ = 0.13 A
25
Units
dB
dBc
%
dB
20
15
10
5
0
-5
-10
-15
S11
-20 S21
S22
-25
1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5
Frequency (GHz)
Copyright © 2013 - 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc.
11 CGHV27030S Rev 0.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf

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