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CJP10N60 Schematic ( PDF Datasheet ) - JIANGSU CHANGJIANG

Teilenummer CJP10N60
Beschreibung N-Channel Power MOSFET / Transistor
Hersteller JIANGSU CHANGJIANG
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Gesamt 3 Seiten
CJP10N60 Datasheet, Funktion
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L/TO-220F Plastic-Encapsulate MOSFETS
CJP10N60,CJPF10N60 N-Channel Power MOSFET
TO-220-3L/TO-220F
Description
The C JP10N60/CJPF10N60 is a high volt age and high current
power MOSFET , design ed to ha ve c haracteristics, such as fast
switching time, low gate charge, lo w on-st ate resist ance and have
rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching
applications in power supplies, PWM motor controls, high efficient DC
to DC converters and bridge circuits.
FEATURES
z Low Crss
z Fast Switching
z 100% avalanche tested
1. GATE
2. DRAIN
3. SOURCE
2.Drain
1.Gate
3.Source
Maximum ratings (Ta=25unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID 10
PD 2
RθJA 62.5
TJ
Tstg -50
Value
600
±30
150
~+150
Unit
V
A
W
/W
C,Mar,2014
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