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Teilenummer | P20N06 |
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Beschreibung | CEP20N06 | |
Hersteller | CET | |
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Gesamt 4 Seiten CEP20N06/CEB20N06
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 28A, RDS(ON) = 40mΩ @VGS = 10V.
RDS(ON) = 50mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
ID
IDM
28
20
112
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
50
0.4
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Units
V
V
A
A
A
W
W/ C
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice .
Symbol
RθJC
RθJA
1
Limit
3
50
Units
C/W
C/W
Rev 1. 2010.Dec
http://www.cetsemi.com
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ P20N06 Schematic.PDF ] |
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