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CEP02N65A Schematic ( PDF Datasheet ) - CET

Teilenummer CEP02N65A
Beschreibung N-Channel Enhancement Mode Field Effect Transistor
Hersteller CET
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Gesamt 4 Seiten
CEP02N65A Datasheet, Funktion
CEP02N65A/CEB02N65A
CEF02N65A
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP02N65A
CEB02N65A
CEF02N65A
VDSS
650V
650V
650V
RDS(ON)
10.5Ω
10.5Ω
10.5Ω
ID
1.3A
1.3A
1.3A d
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
DG
GS
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM e
PD
650
±30
1.3
0.8
5.2
41
0.33
1.3
0.8 d
5.2 d
27
0.22
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3
62.5
4.5
65
Units
V
V
A
A
A
W
W/ C
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2011.Oct
http://www.cetsemi.com
Free Datasheet http://www.Datasheet4U.com





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