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PDTC114EE Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer PDTC114EE
Beschreibung NPN resistor-equipped transistors
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 17 Seiten
PDTC114EE Datasheet, Funktion
PDTC114E series
NPN resistor-equipped transistors;
R1 = 10 k, R2 = 10 k
Rev. 12 — 21 December 2011
Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD)
plastic packages.
Table 1. Product overview
Type number
Package
NXP
PDTC114EE
SOT416
PDTC114EM
SOT883
PDTC114ET
SOT23
PDTC114EU
SOT323
JEITA
SC-75
SC-101
-
SC-70
JEDEC
PNP
complement
- PDTA114EE
- PDTA114EM
TO-236AB PDTA114ET
- PDTA114EU
Package
configuration
ultra small
leadless ultra small
small
very small
1.2 Features and benefits
100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
1.3 Applications
Digital application in automotive and
industrial segments
Control of IC inputs
Cost-saving alternative for BC847/857
series in digital applications
Switching loads
1.4 Quick reference data
Table 2.
Symbol
VCEO
IO
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min Typ Max Unit
- - 50 V
- - 100 mA
7 10 13 k
0.8 1.0 1.2
Free Datasheet http://www.Datasheet4U.com






PDTC114EE Datasheet, Funktion
NXP Semiconductors
PDTC114E series
NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
102
0.2
0.1
0.05
0.02
10
0.01
0
006aac779
1
10-5
10-4
10-3
10-2
10-1
1
10 102 103
tp (s)
Fig 4.
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTC114ET (SOT23); typical values
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
10
0.01
006aac780
0
1
10-5
10-4
10-3
10-2
10-1
1
10 102 103
tp (s)
Fig 5.
FR4 PCB, standard footprint
Transient thermal impedance from junction to ambient as a function of pulse duration for
PDTC114EU (SOT323); typical values
PDTC114E_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 12 — 21 December 2011
© NXP B.V. 2011. All rights reserved.
6 of 17
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PDTC114EE pdf, datenblatt
NXP Semiconductors
PDTC114E series
NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k
3.3
2.9
1.9
3 1.7
2
0.7 0.6
(3×) (3×)
0.5
(3×)
0.6
(3×)
1
Fig 18. Reflow soldering footprint PDTC114ET (SOT23)
2.2
1.2
(2×)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot023_fr
1.4
(2×)
4.6 2.6
1.4
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport direction during soldering
2.8
4.5 sot023_fw
Fig 19. Wave soldering footprint PDTC114ET (SOT23)
PDTC114E_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 12 — 21 December 2011
© NXP B.V. 2011. All rights reserved.
12 of 17
Free Datasheet http://www.Datasheet4U.com

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