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DRA5113Z0L Schematic ( PDF Datasheet ) - Panasonic Semiconductor

Teilenummer DRA5113Z0L
Beschreibung Silicon PNP Epitaxial Transistor
Hersteller Panasonic Semiconductor
Logo Panasonic Semiconductor Logo 




Gesamt 4 Seiten
DRA5113Z0L Datasheet, Funktion
DReovcisNioon. . T3 T4-EA-11569
Product Standards
Transistors with Built-in Resistor
DRA5113Z0L
DRA5113Z0L
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC5113Z
DRA2113Z in SMini3 type package
Features
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol: L1
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
2.0
0.3
3
12
(0.65)(0.65)
1.3
1. Base
2. Emitter
3. Collector
Unit: mm
0.13
0.9
Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
Collector-emitter voltage (Base open)
VCEO
Collector current
IC
Total power dissipation
PT
Junction temperature
Tj
Operating ambient temperature
Topr
Storage temperature
Tstg
Rating
-50
-50
-100
150
150
-40 to +85
-55 to +150
Unit
V
V
mA
mW
°C
°C
°C
Panasonic
JEITA
Code
SMini3-F2-B
SC-85
Internal Connection
R1
B
R2
C
E
Resistance R1 1
value
R2 10
k
k
Electrical Characteristics Ta = 25 C 3 C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
VCBO IC = -10 μA, IE = 0
-50
V
Collector-emitter voltage (Base open)
VCEO IC = -2 mA, IB = 0
-50
V
Collector-base cutoff current (Emitter open) ICBO VCB = -50 V, IE = 0
-0.1 μA
Collector-emitter cutoff current (Base open) ICEO VCE = -50 V, IB = 0
-0.5 μA
Emitter-base cutoff current (Collector open) IEBO VEB = -6 V, IC = 0
-1.5 mA
Forward current transfer ratio
hFE VCE = -10 V, IC = -5 mA
30
-
Collector-emitter saturation voltage
VCE(sat) IC = -10 mA, IB = -0.5 mA
-0.25 V
Input voltage
Vi(on) VCE = -0.2 V, IC = -5 mA
Vi(off) VCE = -5 V, IC = -100 μA
-1.0 V
-0.4 V
Input resistance
R1
-30% 1 +30% k
Resistance ratio
R1/R2
0.08 0.1 0.12
-
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Page 1 of 3
Established : 2009-10-14
Revised : 2014-01-17
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