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Número de pieza | 30NF20 | |
Descripción | STB30NF20 | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 30NF20 (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
No Preview Available ! STP30NF20 - STB30NF20
STW30NF20
N-channel 200V - 0.065Ω - 30A - TO-220/TO-247/D2PAK
Low gate charge STripFET™ Power MOSFET
Features
Type
STP30NF20
STW30NF20
STB30NF20
VDSS
200V
200V
200V
RDS(on)
0.075Ω
0.075Ω
0.075Ω
ID
30A
30A
30A
■ Gate charge minimized
■ 100% avalanche tested
■ Excellent figure of merit (RDS*Qg)
■ Very good manufactuing repeability
■ Very low intrinsic capacitances
PTOT
125W
125W
125W
Application
■ Switching applications
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters.
3
2
1
TO-247
3
1
D²PAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STP30NF20
STW30NF20
STB30NF20
Marking
30NF20
30NF20
30NF20
Package
TO-220
TO-247
D²PAK
Packaging
Tube
Tube
Tape & reel
October 2007
Rev 2
1/16
www.st.com
16
Free Datasheet http://www.0PDF.com
1 page STP30NF20 - STW30NF20 - STB30NF20
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
Test conditions
VDD=100V, ID=15A,
RG=4.7Ω, VGS=10V
(see Figure 16)
VDD=100V, ID=15A,
RG=4.7Ω, VGS=10V
(see Figure 16)
Min. Typ. Max. Unit
35 ns
15.7 ns
38 ns
8.8 ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
Source-drain current
Source-drain current
(pulsed)
VSD(2) Forward on voltage
ISD=30A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=30A, di/dt = 100A/µs,
VDD=100 V, Tj=25°C
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=30A, di/dt = 100A/µs,
VDD=100 V, Tj=150°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
30 A
120 A
1.5 V
155 ns
0.96 µC
12.4 A
194 ns
1.42 µC
14.6 A
5/16
Free Datasheet http://www.0PDF.com
5 Page STP30NF20 - STW30NF20 - STB30NF20
Package mechanical data
DIM.
A
A1
b
b1
b2
c
D
E
e
L
L1
L2
øP
øR
S
MIN.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
14.20
3.70
3.55
4.50
TO-247 MECHANICAL DATA
mm.
TYP
5.45
18.50
5.50
MAX.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
14.80
4.30
3.65
5.50
MIN.
0.19
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.560
0.14
0.140
0.177
inch
TYP.
0.214
0.728
0.216
MAX.
0.20
0.102
0.055
0.094
0.134
0.03
0.793
0.620
0.582
0.17
0.143
0.216
11/16
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11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet 30NF20.PDF ] |
Número de pieza | Descripción | Fabricantes |
30NF20 | STB30NF20 | STMicroelectronics |
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