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WFD830B Schematic ( PDF Datasheet ) - Winsemi

Teilenummer WFD830B
Beschreibung Silicon N-Channel MOSFET
Hersteller Winsemi
Logo Winsemi Logo 




Gesamt 7 Seiten
WFD830B Datasheet, Funktion
Free Datasheet http://www.nDatasheet.com
Features
5A,500V, RDS(on)(Max1.6Ω)@VGS=10V
Ultra-low Gate charge(Typical 18nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
WFD830B
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies, power
factor correction and half bridge and full bridge resonant topology
line a electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
500
5
2.9
20
±30
300
7.3
4.5
61
0.49
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
Value
Min Typ Max
- - 2.05
- 0.5 -
- - 62.5
Units
/W
/W
/W
Rev.A Feb.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.






WFD830B Datasheet, Funktion
Free Datasheet http://www.nDatasheet.com
WFD830B
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
Steady, keep you advance
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