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PDF D1918 Data sheet ( Hoja de datos )
| Número de pieza | D1918 | |
| Descripción | NPN Transistor - 2SD1918 | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Transistors
2SD2211 / 2SD1918 / 2SD1857A
Power Transistor (160V , 1.5A)
2SD2211 / 2SD1918 / 2SD1857A
!Features
1) High breakdown voltage.(BVCEO = 160V)
2) Low collector output capacitance.
(Typ. 20pF at VCB = 10V)
3) High transition frequency.(fT = 80MHZ)
4) Complements the 2SB1275 / 2SB1236A.
!External dimensions (Units : mm)
2SD2211
4.0
1.0 2.5 0.5
(1)
(2)
(3)
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
2SD1857A
2SD2211
2SD1918
Symbol
VCBO
VCEO
VEBO
IC
PC
Limits
160
160
5
1.5
3
1
2
1
10
Junction temperature
Tj 150
Storage temperature
Tstg
−55 ∼+150
∗ 1 Single pulse Pw=100ms
∗ 2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
∗ 3 When mounted on a 40 x 40 x 0.7mm ceramic board.
Unit
V
V
V
A(DC)
A(Pulse)
W
∗1
∗2
W ∗3
W(Tc=25°C)
°C
°C
ROHM : MPT3
EIAJ : SC-62
2SD1918
ROHM : CPT3
EIAJ : SC-63
5.5 1.5
0.9
0.8Min.
1.5
2.5
9.5
C0.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
!Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
* Denotes hFE
2SD2211
MPT3
QR
DQ*
T100
1000
2SD1918 2SD1857A
CPT3
ATV
Q PQ
−−
TL TV2
2500
2500
2SD1857A
6.8
2.5
0.65Max.
ROHM : ATV
0.5
(1) (2) (3)
2.54 2.54
1.05 0.45
Taping specifications
(1) Emitter
(2) Collector
(3) Base
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current
transfer ratio
2SD2211,2SD1918
2SD1857A
Transition frequency
Output capacitance
∗ Measured using pulse current.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
Min.
160
160
5
−
−
−
−
120
82
−
−
Typ.
−
−
−
−
−
−
−
−
−
80
20
Max.
−
−
−
1
1
2
1.5
390
270
−
−
Unit
V
V
V
µA
µA
V
V
−
−
MHz
pF
IC = 50µA
IC = 1mA
IE = 50µA
VCB = 120V
VEB = 4V
IC/IB = 1A/0.1A
IC/IB = 1A/0.1A
Conditions
VCE/IC = 5V/0.1A
VCE = 5V , IE = −0.1A , f = 30MHz
VCB = 10V , IE = 0A , f = 1MHz
∗
∗
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet D1918.PDF ] | |
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