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Teilenummer | RFN20NS6S |
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Beschreibung | Super Fast Recovery Diode | |
Hersteller | ROHM Semiconductor | |
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Gesamt 5 Seiten Super Fast Recovery Diode
RFN20NS6S
zSerise
Standard Fast Recovery
zDimensions(Unit : mm)
zApplications
General rectification
RFN20
NS6S
ձ
zFeatures
1)Low switching loss
2)High current overload capacity
zConstruction
Silicon epitaxial planer type
ROHM : LPDS
JEITA : TO263S
ձ Manufacture Date
zTaping Dimensions(Unit : mm)
Data Sheet
zLand Size Figure(Unit : mm)
LPDS
zStructure
zAbsolute Maximum Ratings(Tc=25°C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average rectified foward current
Forward current surge peak
Junction temperature
Storage temperature
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Conditions
Duty䍺0.5
Direct voltage
60Hz half sin wave , Resistive load Tc=47°C
60Hz half sin wave , Non-repetitive at Tj=25°C (*1)
zElectrical Characteristics(Tj=25°C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Thermal resistance
Symbol
VF
IR
trr
Rth(j-c)
Conditions
IF=20A
VR=600V
IF=0.5A,IR=1A,Irr=0.25×IR
Junction to case
Min.
䠉
䠉
䠉
䠉
Limits
Unit
600 V
600 V
20 A
100 A
150 °C
55 to 150
°C
(*1) 1-3pin common circuit
Typ.
1.25
0.05
40
䠉
Max.
1.55
10
60
2.5
Unit
V
μA
ns
°C/W
WWWROHMCOM
Ú 2/(- #O ,TD !LL RIGHTS RESERVED
1/4
2012.06 - Rev.A
Free Datasheet http://www.datasheet4u.net/
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ RFN20NS6S Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
RFN20NS6S | Super Fast Recovery Diode | ROHM Semiconductor |
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