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Teilenummer | C2498 |
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Beschreibung | NPN Transistor - 2SC2498 | |
Hersteller | Toshiba Semiconductor | |
Logo | ||
Gesamt 5 Seiten TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC2498
VHF~UHF Band Low Noise Amplifier Application
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
30
20
3
50
25
300
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
2SC2498
Unit: mm
Microwave Characteristics (Ta = 25°C)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1E
Weight: 0.21 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
ïS21eï2 (1)
ïS21eï2 (2)
NF (1)
NF (2)
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 10 mA, f = 500 MHz
VCE = 10 V, IC = 10 mA, f = 1 GHz
VCE = 10 V, IC = 5 mA, f = 500 MHz
VCE = 10 V, IC = 5 mA, f = 1 GHz
Min Typ. Max Unit
¾ 3.5 ¾ GHz
¾ 14.5 ¾
¾9¾
dB
¾ 2.5 ¾
dB
¾4¾
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Collector output capacitance
Reverse transfer capacitance
ICBO
IEBO
hFE
Cob
Cre
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
VCE = 10 V, IC = 10 mA
VCB = 10 V, IE = 0, f = 1 MHz
(Note)
¾
¾
30
¾
¾
¾
¾
80
1.15
0.75
1
1
300
¾
¾
mA
mA
pF
pF
Note: Cre is measured by 3 terminal method with capacitance bridge.
1 2003-03-19
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ C2498 Schematic.PDF ] |
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