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PDF EN29LV320B Data sheet ( Hoja de datos )
| Número de pieza | EN29LV320B | |
| Descripción | 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory | |
| Fabricantes | EON | |
| Logotipo |  |
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EN29LV320B
EN29LV320B
32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only
FEATURES
• Single power supply operation
- Full voltage range: 2.7 to 3.6 volts read and
write operations
• High performance
- Access times as fast as 70 ns
• Low power consumption (typical values at 5
MHz)
- 9 mA typical active read current
- 20 mA typical program/erase current
- Less than 1 µA current in standby or automatic
sleep mode
• Flexible Sector Architecture:
- Eight 8-Kbyte sectors, sixty-three 64k-byte
sectors
- 8-Kbyte sectors for Top or Bottom boot
- Sector/Sector Group protection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
Additionally, temporary Sector Group
Unprotect allows code changes in previously
locked sectors
• High performance program/erase speed
- Word program time: 8µs typical
- Sector erase time: 100ms typical
- Chip erase time: 8s typical
• JEDEC Standard compatible
• Standard DATA# polling and toggle bits
feature
• Erase Suspend / Resume modes:
Read and program another Sector during
Erase Suspend Mode
• Support JEDEC Common Flash Interface
(CFI).
• Low Vcc write inhibit < 2.5V
• Minimum 100K program/erase endurance
cycles
• RESET# hardware reset pin
- Hardware method to reset the device to read
mode
• WP#/ACC input pin
- Write Protect (WP#) function allows
protection of outermost two boot sectors,
regardless of sector protect status
- Acceleration (ACC) function provides
accelerated program times
• Package Options
- 48-pin TSOP (Type 1)
- 48 ball 6mm x 8mm TFBGA
• Industrial Temperature Range
GENERAL DESCRIPTION
The EN29LV320B is a 32-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 4,194,304 bytes or 2.097,152 words. Any word can be programmed typically in 8µs.
The EN29LV320B features 3.0V voltage read and write operation, with access times as fast as 70ns
to eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV320B has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector
or full Chip erase operation, where each Sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of
100K program/erase cycles on each Sector.
.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
© 2004 Eon Silicon Solution, Inc.,
Rev. A, Issue Date: 2009/01/14
www.eonssi.com
Free Datasheet http://www.datasheet4u.net/
1 page  
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EN29LV320B
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1FF000–1FFFFF
Note: The address bus is A20:A-1 in byte mode where BYTE# = VIL or A20:A0 in word mode where
BYTE# = VIH
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
5
© 2004 Eon Silicon Solution, Inc.,
Rev. A, Issue Date: 2009/01/14
www.eonssi.com
Free Datasheet http://www.datasheet4u.net/
5 Page 
USER MODE DEFINITIONS
Word / Byte Configuration
EN29LV320B
The signal set on the BYTE# pin controls whether the device data I/O pins DQ15-DQ0 operate in the
byte or word configuration. When the BYTE# Pin is set at logic ‘1’, then the device is in word
configuration, DQ15-DQ0 are active and are controlled by CE# and OE#.
On the other hand, if the BYTE# Pin is set at logic ‘0’, then the device is in byte configuration, and only
data I/O pins DQ0-DQ7 are active and controlled by CE# and OE#. The data I/O pins DQ8-DQ14 are
tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function.
Standby Mode
The EN29LV320B has a CMOS-compatible standby mode, which reduces the current to < 1µA (typical).
It is placed in CMOS-compatible standby when the CE# pin is at VCC ± 0.5. RESET# and BYTE# pin
must also be at CMOS input levels. The device also has a TTL-compatible standby mode, which
reduces the maximum VCC current to < 1mA. It is placed in TTL-compatible standby when the CE# pin
is at VIH. When in standby modes, the outputs are in a high-impedance state independent of the OE#
input.
Automatic Sleep Mode
The EN29LV320B has an automatic sleep mode, which minimizes power consumption. The devices will
enter this mode automatically when the states of address bus remain stable for tacc + 30ns. ICC4 in the
DC Characteristics table shows the current specification. With standard access times, the device will
output new data when addresses change.
Read Mode
The device is automatically set to reading array data after device power-up or hardware reset. No
commands are required to retrieve data. The device is also ready to read array data after completing an
Embedded Program or Embedded Erase algorithm.
After the device accepts a Sector Erase Suspend command, the device enters the Sector Erase
Suspend mode. The system can read array data using the standard read timings, except that if it reads
at an address within erase-suspended sectors, the device outputs status data. After completing a
programming operation in the Sector Erase Suspend mode, the system may once again read array data
with the same exception. See “Sector Erase Suspend/Resume Commands” for more additional
information.
The system must issue the reset command to re-enable the device for reading array data if DQ5 goes
high or while in the autoselect mode. See the “Reset Command” for additional details.
Output Disable Mode
When the OE# pin is at a logic high level (VIH), the output from the EN29LV320B is disabled. The
output pins are placed in a high impedance state.
Autoselect Identification Mode
The autoselect mode provides manufacturer and device identification, and sector protection verification,
through identifier codes output on DQ15–DQ0. This mode is primarily intended for programming
equipment to automatically match a device to be programmed with its corresponding programming
algorithm. However, the autoselect codes can also be accessed in-system through the command
register.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
11
© 2004 Eon Silicon Solution, Inc.,
Rev. A, Issue Date: 2009/01/14
www.eonssi.com
Free Datasheet http://www.datasheet4u.net/
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet EN29LV320B.PDF ] | |
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