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PDF CJP75N80 Data sheet ( Hoja de datos )
| Número de pieza | CJP75N80 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | JIANGSU CHANGJIANG | |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate MOSFETS
CJP75N80 N-Channel Power MOSFET
General Description
The CJ75N80 uses advanced trench technology and design to
Provide excellent RDS(on) with low gate charge. Good stability and
uniformity with high EAS .This device is suitable for use in PWM,
load switching and general purpose applications.
FEATURE
z Advanced trench process technology
z Special designed for convertors and power controls
z High density cell design for ultra low RDS(on)
z Fully characterized avalanche voltage and current
z Fast switching
z Avalanche energy 100% test
APPLICATIONS
z Power switching application
z Hard switched and high frequency circuits
z Uninterruptible power supply
TO-220
1. GATE
2. DRAIN
3. SOURCE
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source voltage
Symbol
VDSS
Gate-Source Voltage
VGS
Drain Current(DC) at TC=25℃
ID(DC)
Drain Current-Continuous @Current-Pulsed(note1)
IDM(pulse)
Power Dissipation
Maximum Power Dissipation
(note 3, Ta=25℃)
(note 4, Tc=25℃)
PD
Single Pulsed Avalanche Energy(note2)
EAS
Thermal Resistance, Junction-to-Ambient
RθJA
Storage Temperature
Tj
Junction Temperature
Tstg
Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. EAS condition: Tj=25℃ , VDD=37.5V,VG=10V,L=0.5mH,ID=20A
3. This test is performed with no heat sink at Ta=25℃
4. This test is performed with infinite heat sink at Tc=25℃
Value
75
±25
80
320
2
160
580
62.5
175
-55 ~+175
123
Unit
V
A
W
W
mJ
℃/W
℃
B,Dec,2011
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CJP75N80.PDF ] | |
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