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PDF D1450 Data sheet ( Hoja de datos )
| Número de pieza | D1450 | |
| Descripción | NPN Transistor - 2SD1450 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de D1450 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Transistor
2SD1450
Silicon NPN epitaxial planer type
For low-frequency amplification
s Features
q Optimum for high-density mounting.
q Allowing supply with the radial taping.
q Low collector to emitter saturation voltage VCE(sat).
4.0±0.2
Unit: mm
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (Ta=25˚C)
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
25
20
12
1
0.5
300
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON resistanse
ICBO
VCBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Ron*3
VCB = 25V, IE = 0
100 nA
IC = 10µA, IE = 0
25
V
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 2V, IC = 0.5A*2
VCE = 2V, IC = 1A*2
IC = 500mA, IB = 20mA*2
IC = 500mA, IB = 20mA*2
20
12
200 800
60
0.13 0.4
1.2
V
V
V
V
VCB = 10V, IE = –50mA, f = 200MHz 200 MHz
VCB = 10V, IE = 0, f = 1MHz
10 pF
0.6 Ω
*2 Pulse measurement
*1hFE1 Rank classification
Rank
R
S
hFE1 200 ~ 350 300 ~ 500
T
400 ~ 800
*3Ron Measurement circuit
1kΩ
IB=1mA
VB VV VA
Ron=
VB
VA–VB
!1000(Ω)
f=1kHz
V=0.3V
1
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet D1450.PDF ] | |
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