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Teilenummer | P2804NVG |
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Beschreibung | N- & P-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | NIKO-SEM | |
Logo | ||
Gesamt 8 Seiten NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2804NVG
SOP-8
Lead-Free
PRODUCT SUMMARY
V(BR)DSS RDS(ON)
N-Channel 40 28m
P-Channel -40 65m
ID
7A
-5A
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Power Dissipation
TC = 25 °C
TC = 70 °C
Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VDS
VGS
ID
IDM
PD
Tj, Tstg
TL
N-Channel P-Channel UNITS
40 -40 V
±20 ±20 V
7 -6
6 -5 A
20 -20
2
W
1.3
-55 to 150
275
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle ≤ 1%
TYPICAL
MAXIMUM
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS
VGS(th)
STATIC
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
LIMITS
UNIT
MIN TYP MAX
N-Ch 40
P-Ch -40
N-Ch 1.0 1.5 2.5
P-Ch -1.0 -1.5 -2.5
V
1 AUG-19-2004
Free Datasheet http://www.datasheet4u.com/
NIKO-SEM
P-CHANNEL
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2804NVG
SOP-8
Lead-Free
100
V GS= 0V
10
1 T A = 125° C
0.1 25° C -55° C
0.01
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VSD - Body Diode Forward Voltage(V)
6 AUG-19-2004
Free Datasheet http://www.datasheet4u.com/
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ P2804NVG Schematic.PDF ] |
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