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Número de pieza | DTU06N03 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Din-Tek | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DTU06N03 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! N-Channel 30-V (D-S) MOSFET
D56/
www.daysemi.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0041 at VGS = 10 V
30
0.0059 at VGS = 4.5 V
ID (A)a, g
60g
60g
Qg (Typ.)
34 nC
TO-252
D
G
FEATURES
• Halogen-free
• TrenchFET® Gen III Power MOSFET
• 100 % Rg Tested
• 100 % Avalanche Tested
APPLICATIONS
• Low-Side Switch for DC/DC Converters
- Servers
- POL
- VRM
• OR-ing
RoHS
COMPLIANT
GDS
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
TC = 25 °C
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IDM
IS
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Soldering Recommendations (Peak Temperature)
Limit
30
± 20
60g
60g
36b, c
29b, c
80
60g
4.9b, c
50
125
83
53
5.4b, c
3.4b, c
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typical
18
1.0
Maximum
23
1.5
Unit
V
A
mJ
W
°C
Unit
°C/W
1
Free Datasheet http://www.datasheet4u.com/
1 page D56/
www.daysemi.jp
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
170
136
102
68 Package Limited
34
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
100 2.5
80 2.0
60 1.5
40 1.0
20 0.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet DTU06N03.PDF ] |
Número de pieza | Descripción | Fabricantes |
DTU06N03 | N-Channel MOSFET | Din-Tek |
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