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Número de pieza | IPD85P04P4-07 | |
Descripción | Power-Transistor | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPD85P04P4-07 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! OptiMOS®-P2 Power-Transistor
Features
• P-channel - Normal Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPD85P04P4-07
Product Summary
V DS
R DS(on)
ID
-40 V
7.3 mW
-85 A
PG-TO252-3-313
Type
IPD85P04P4-07
Package
PG-TO252-3-313
Marking
4P0407
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
ID
T C=25°C,
V GS=-10V
T C=100°C,
V GS=-10V2)
Pulsed drain current1)
Avalanche energy, single pulse1)
I D,pulse
E AS
T C=25°C
I D=-42.5A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
-85
-61
-340
30
-85
±20
88
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
2011-04-18
Free Datasheet http://www.datasheet4u.com/
1 page IPD85P04P4-07
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
-10V
280
210
140
70
0
01234
-V DS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = -6V
parameter: T j
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: V GS
25
-5V
-5.5V
-7V 20
15
-6V
-5.5V
-5V
56
10
5
0
25 50
-I D [A]
-6V
-6.5V
-7V
-10V
75
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = -85 A; V GS = -10 V
9
280 8
7
210
6
140
5
70
175 °C
25 °C
-55 °C
0
2345678
-V GS [V]
4
3
-60 -20 20 60 100 140 180
T j [°C]
Rev. 1.0
page 5
2011-04-18
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IPD85P04P4-07.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPD85P04P4-07 | Power-Transistor | Infineon |
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