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Número de pieza | NTTFS4800N | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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Power MOSFET
30 V, 32 A, Single N−Channel, m8FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters
• Point of Load
• Power Load Switch
• Notebook Battery Management
• Motor Control
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation
(Note 1)
RqJA
VDSS 30 V
VGS ±20 V
TA = 25°C
ID
8.3 A
TA = 85°C
6.0
TA = 25°C
PD
2.2 W
Continuous Drain
C(Nuortreen1t)RqJA ≤ 10 s
TA = 25°C
TA = 85°C
ID
11.8 A
8.5
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
Power Dissipation
RqJA (Note 2)
TA = 25°C
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
TC = 85°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Current Limited by Pkg.
TA = 25°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source DV/DT
PD
ID
PD
ID
PD
IDM
IDmaxPkg
TJ,
Tstg
IS
dV/dt
4.5 W
5.0 A
3.6
0.86 W
32 A
23
33.8 W
57
20
−55 to
+150
28
6.0
A
A
°C
A
V/ns
Single Pulse Drain−to−Source Avalanche Energy EAS 36.6 mJ
(TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 27 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 0
1
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
20 mW @ 10 V
27 mW @ 4.5 V
ID MAX
32 A
N−Channel MOSFET
D (5−8)
G (4)
1
WDFN8
(m8FL)
CASE 511AB
S (1,2,3)
MARKING DIAGRAM
1
SD
S 4800 D
S AYWWG D
GGD
4800
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTTFS4800NTAG WDFN8 1500/Tape & Reel
(Pb−Free)
NTTFS4800NTWG WDFN8 5000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTTFS4800N/D
Free Datasheet http://www.datasheet4u.com/
1 page NTTFS4800N
TYPICAL CHARACTERISTICS
1600
1400
1200
1000
800
600
400
200
0
0
VGS = 0 V
TJ = 25°C
Ciss
Coss
Crss
5 10 15 20 25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
30
100
VDD = 15 V
ID = 15 A
VGS = 10 V
td(off)
tf
tr
10 td(on)
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
10 ms
10 100 ms
1 ms
1
VGS = 20 V
Single Pulse
0.1 TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.1
1
10 ms
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
10
9 QT
8
7
6
5
4 Qgs
Qgd
3 TJ = 25°C
2 VDD = 15 V
1
VGS = 10 V
ID = 20 A
0
0 2 4 6 8 10 12 14 16 18
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
18 VGS = 0 V
16 TJ = 25°C
14
12
10
8
6
4
2
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
40
ID = 27 A
35
30
25
20
15
10
5
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet NTTFS4800N.PDF ] |
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