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PDF AOU2N60 Data sheet ( Hoja de datos )
| Número de pieza | AOU2N60 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOD2N60/AOU2N60
600V, 2A N-Channel MOSFET
General Description
Product Summary
The AOD2N60 & AOU2N60 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested!
100% Rg Tested!
700V@150℃
2A
< 4.4Ω
Top View
TO252
DPAK
Bottom View
TO251
Top View
Bottom View
D
D
D
S
G
G
S
S
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TC=25°C
CurrentB
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energyH
Peak diode recovery dv/dt
VGS
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
S DG
G
Maximum
600
±30
2
1.4
8
2
60
120
5
56.8
0.45
-50 to 150
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
RθCS
RθJC
Typical
45
-
1.8
Maximum
55
0.5
2.2
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev 5: Nov 2010
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page  
AOD2N60/AOU2N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
0
25 50 75 100 125
TCASE (°C)
Figure 12: Power De-rating (Note B)
150
2.5
2.0
1.5
1.0
0.5
0.0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Current De-rating (Note B)
150
400
TJ(Max)=150°C
300 TA=25°C
200
100
0
0.0001
0.001
0.01
0.1 1
Pulse Width (s)
10
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
100
1000
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1 RθJA=55°C/W
0.1
0.01
0.001
0.00001
PD
Single Pulse
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
100
1000
Rev 5: Nov 2010
www.aosmd.com
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOU2N60.PDF ] | |
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