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PDF AO4408L Data sheet ( Hoja de datos )
| Número de pieza | AO4408L | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Freescale | |
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AO4408, AO4408L
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO4408 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and fast
switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion.
AO4408L(Green Product) is offered in a lead-free package.
Features
VDS (V) = 30V
ID = 12A
RDS(ON) < 13mΩ (VGS = 10V)
RDS(ON) < 16mΩ (VGS = 4.5V)
SD
SD
SD
GD
SOIC-8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
Avalanche Current B,E
Repetitive Avalanche Energy B,E L=0.1mH
ID
IDM
IAV
EAV
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
12
10
80
30
100
3
2.1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
23
48
12
Max
40
65
16
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
1/5
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
1 page  
AO4408, AO4408L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
60 TA=25°C
50
40
30
tA
=
L⋅ID
BV − VDD
20
10
0
0.00001
0.0001
Time in avalanche, tA (s)
Figure 12: Avalanche capability
0.001
4
3
2
1
0
25
10s
Steady-
State
50 75 100 125
TCASE (°C)
Figure 13: Power De-rating (Note A)
150
5/5
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AO4408L.PDF ] | |
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