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PDF 33N25 Data sheet ( Hoja de datos )
| Número de pieza | 33N25 | |
| Descripción | FDB33N25 | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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1. 33N25  Hay una vista previa y un enlace de descarga de 33N25 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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FDB33N25
250V N-Channel MOSFET
Features
• 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V
• Low gate charge ( typical 36.8 nC)
• Low Crss ( typical 39 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
September 2005
UniFET TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
D
GS
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA*
Thermal Resistance, Junction-to-Ambient*
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2005 Fairchild Semiconductor Corporation
FDB33N25 Rev A
1
D
{
z
G{
z
z
{
S
FDB33N25
250
33
20.4
132
±30
918
33
23.5
4.5
235
1.89
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Min.
--
--
--
Max.
0.53
40
62.5
Unit
°C/W
°C/W
°C/W
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
Gate Charge Test Circuit & Waveform
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
10V
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS
=
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
FDB33N25 Rev A
5 www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 33N25.PDF ] | |
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