Datenblatt-pdf.com


EM6M2 Schematic ( PDF Datasheet ) - ROHM Semiconductor

Teilenummer EM6M2
Beschreibung 1.2V Drive NchPch MOSFET
Hersteller ROHM Semiconductor
Logo ROHM Semiconductor Logo 




Gesamt 8 Seiten
EM6M2 Datasheet, Funktion
1.2V Drive Nch+Pch MOSFET
EM6M2
zStructure
Silicon N-channel MOSFET /
Silicon P-channel MOSFET
zDimensions (Unit : mm)
EMT6
zFeatures
1) Nch MOSFET and Pch MOSFET are put in EMT6 package.
2) High-speed switching.
3) Low voltage drive (1.2V drive).
4) Built-in G-S Protection Diode.
zApplications
Switching
Each lead has same dimensions
Abbreviated symbol : M02
zInner circuit
(6) (5) (4)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
EM6M2
Taping
T2R
8000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Total power dissipation
VDSS
VGSS
ID
IDP1
PD2
Channel temperature
Tch
Range of storage temperature
Tstg
1 Pw 10µs, Duty cycle 1%
2 Each terminal mounted on a recommended land
1
2
1
(1) (2)
1 ESD PROTECTION DIODE
2 BODY DIODE
(3)
Limits
Tr1 : N-ch Tr2 : P-ch
20 20
± 8 ±10
±200
±200
±400
±400
150
120
150
55 to +150
Unit
V
V
mA
mA
mW / TOTAL
mW / ELEMENT
°C
°C
2
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/7
2009.07 - Rev.A
Free Datasheet http://www.datasheet4u.com/






EM6M2 Datasheet, Funktion
EM6M2
1.0 VDS= -10V
Pulsed
Ta=-25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
0.01
0.1
1
DRAIN-CURRENT : -ID[A]
Fig.10 Forward Transfer Admittance
vs. Drain Current
1 VGS=0V
Pulsed
0.1 Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0
0.5 1 1.5
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage
Data Sheet
5 Ta=25°C
Pulsed
4
ID= -0.2A
3
ID= -0.01A
2
1
0
0 2 4 6 8 10
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1000
100
td(off)
tf
Ta=25°C
VDD= -10V
VGS=-4.5V
RG=10
Pulsed
10
1
0.01
tr
td(on)
0.1
DRAIN-CURRENT : -ID[A]
Fig.13 Switching Characteristics
1
5
4
3
2
Ta=25°C
1
VDD= -10V
ID= -0.2A
RG=10
0 Pulsed
0 0.5 1 1.5
TOTAL GATE CHARGE : Qg [nC]
Fig.14 Dynamic Input Characteristics
1000
Ta=25°C
f=1MHz
VGS=0V
100
Ciss
10
Coss
Crss
1
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.15 Typical Capacitance
vs. Drain-Source Voltage
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
6/7
2009.07 - Rev.A
Free Datasheet http://www.datasheet4u.com/

6 Page







SeitenGesamt 8 Seiten
PDF Download[ EM6M2 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
EM6M12.5V Drive NchPch MOSFETROHM Semiconductor
ROHM Semiconductor
EM6M21.2V Drive NchPch MOSFETROHM Semiconductor
ROHM Semiconductor

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche