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PDF EM6M1 Data sheet ( Hoja de datos )

Número de pieza EM6M1
Descripción 2.5V Drive NchPch MOSFET
Fabricantes ROHM Semiconductor 
Logotipo ROHM Semiconductor Logotipo



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No Preview Available ! EM6M1 Hoja de datos, Descripción, Manual

Transistors
2.5V Drive Nch+Pch MOSFET
EM6M1
EM6M1
zStructure
Silicon N-channel MOSFET /
Silicon P-channel MOSFET
zDimensions (Unit : mm)
EMT6
zFeatures
1) Nch MOSFET and Pch MOSFET are put in EMT6 package.
2) High-speed switching.
3) Low voltage drive (2.5V drive).
4) Built-in G-S Protection Diode.
zApplications
Switching
Each lead has same dimensions
Abbreviated symbol : M01
zPackaging specifications
Type
EM6M1
Package
Code
Basic ordering unit (pieces)
Taping
T2R
8000
zInner circuit
(6) (5)
(4)
1
2
2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
1 Pw 10µs, Duty cycle 1%
2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP1
PD2
Tch
Tstg
1 (1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(1) (2)
(3) Tr2 (Pch) Drain
(3) (4) Tr2 (Pch) Source
1 ESD PROTECTION DIODE
2 BODY DIODE
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
Limits
Tr1 : N-ch Tr2 : P-ch
30 20
± 20 ±12
±0.1 ±0.2
±0.4 ±0.4
150
120
150
55 to +150
Unit
V
V
A
A
mW / TOTAL
mW / ELEMENT
°C
°C
zNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
1/6
Free Datasheet http://www.datasheet4u.com/

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EM6M1 pdf
Transistors
1
Ta=125°C
75°C
25°C
25°C
0.1
VGS=0V
Pulsed
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.10 Source Current vs. Source-Drain Voltage
N-ch
zMeasurement circuit
VGS
ID
D.U.T.
RG
VDS
RL
VDD
Fig.9 Switching Time Test Circuit
VGS
IG(Const.)
RG
ID
D.U.T.
VDS
RL
VDD
Fig.11 Gate Charge Measurement Circuit
EM6M1
Pulse Width
VGS
50%
10%
90%
VDS 10%
50%
10%
td(on)
tr
ton
90%
td(off)
tf
toff
90%
Fig.10 Switching Time Waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.12 Gate Charge Waveform
5/6
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