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PDF PBSS5160V Data sheet ( Hoja de datos )
| Número de pieza | PBSS5160V | |
| Descripción | PNP low VCEsat (BISS) transistor | |
| Fabricantes | NXP Semiconductors | |
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PBSS5160V
60 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 03 — 14 December 2009
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic
package.
NPN complement: PBSS4160V.
1.2 Features
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High efficiency leading to less heat generation
Reduces printed-circuit board area required
Cost effective replacement for medium power transistors BCP52 and BCX52
1.3 Applications
Major application segments
Automotive
Telecom infrastructure
Industrial
Power management
DC-to-DC conversion
Supply line switching
Peripheral driver
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
open base
IC = −1 A;
IB = −100 mA
-
[1] -
-
-
- −60
- −1
- −2
220 330
[1] Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
V
A
A
mΩ
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1 page  
NXP Semiconductors
PBSS5160V
60 V, 1 A PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
ICBO collector-base cut-off current
ICES collector-emitter cut-off current
IEBO emitter-base cut-off current
hFE DC current gain
VCEsat
collector-emitter saturation
voltage
VBEsat
RCEsat
VBEon
td
tr
ton
ts
tf
toff
fT
Cc
base-emitter saturation voltage
equivalent on-resistance
base-emitter turn-on voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Conditions
VCB = −60 V; IE = 0 A
VCB = −60 V; IE = 0 A;
Tj = 150 °C
VCE = −60 V; VBE = 0 V
VEB = −5 V; IC = 0 A
VCE = −5 V; IC = −1 mA
VCE = −5 V; IC = −500 mA
VCE = −5 V; IC = −1 A
IC = −100 mA; IB = −1 mA
IC = −500 mA; IB = −50 mA
IC = −1 A; IB = −100 mA
IC = −1 A; IB = −50 mA
IC = −1 A; IB = −100 mA
IC = −1 A; VCE = −5 V
VCC = −10 V; IC = −0.5 A;
IBon = −0.025 A;
IBoff = 0.025 A
IC = −50 mA; VCE = −10 V;
f = 100 MHz
IE = ie = 0 A; VCB = −10 V;
f = 1 MHz
Min
-
-
-
-
200
[1] 150
[1] 100
-
-
[1] -
-
[1] -
-
-
-
-
-
-
-
150
-
Typ Max Unit
- −100 nA
- −50 μA
-
-
350
250
160
−110
−120
−220
−0.95
220
−0.82
11
30
41
205
55
260
220
−100
−100
-
-
-
−160
−175
−330
−1.1
330
−0.9
-
-
-
-
-
-
-
nA
nA
mV
mV
mV
V
mΩ
V
ns
ns
ns
ns
ns
ns
MHz
9 15 pF
PBSS5160V_3
Product data sheet
Rev. 03 — 14 December 2009
© NXP B.V. 2009. All rights reserved.
5 of 14
Free Datasheet http://www.datasheet4u.com/
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NXP Semiconductors
PBSS5160V
60 V, 1 A PNP low VCEsat (BISS) transistor
9. Packing information
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
PBSS5160V
SOT666
4 mm pitch, 8 mm tape and reel
[1] For further information and the availability of packing methods, see Section 12.
Packing quantity
3 000
-115
PBSS5160V_3
Product data sheet
Rev. 03 — 14 December 2009
© NXP B.V. 2009. All rights reserved.
11 of 14
Free Datasheet http://www.datasheet4u.com/
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