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PBSS5160PAP Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer PBSS5160PAP
Beschreibung PNP/PNP low VCEsat (BISS) transistor
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 17 Seiten
PBSS5160PAP Datasheet, Funktion
PBSS5160PAP
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
23 January 2013
Product data sheet
1. General description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless
medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4160PANP. NPN/NPN complement: PBSS4160PAN.
2. Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
Reduced Printed-Circuit Board (PCB) requirements
High energy efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
Load switch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO
collector-emitter
voltage
IC collector current
ICM peak collector current
Per transistor
RCEsat
collector-emitter
saturation resistance
Conditions
open base
single pulse; tp ≤ 1 ms
IC = -0.5 A; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - -60 V
- - -1 A
- - -1.5 A
- - 360 mΩ
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PBSS5160PAP Datasheet, Funktion
NXP Semiconductors
PBSS5160PAP
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W) duty cycle = 1
0.75
102
0.33
0.5
0.2
0.1
10
0.05
0.02 0.01
006aad167
0
1
10-5
10-4
10-3
10-2
10-1
FR4 PCB 35 µm, mounting pad for collector 1 cm2
1
10 102 103
tp (s)
Fig. 3. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
103 006aad168
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
10
0.02
0.05
0.01
0
1
10-5
10-4
10-3
10-2
4-layer PCB 35 µm, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 4. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS5160PAP
Product data sheet
All information provided in this document is subject to legal disclaimers.
23 January 2013
© NXP B.V. 2013. All rights reserved
6 / 17
Free Datasheet http://www.datasheet4u.com/

6 Page









PBSS5160PAP pdf, datenblatt
NXP Semiconductors
PBSS5160PAP
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
103
RCEsat
(Ω)
102
006aad218
10
(1)
(2)
1
10-1
-10-1
-1
(3)
-10 -102 -103 -104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 16. Collector-emitter saturation resistance as a
function of collector current; typical values
103
RCEsat
(Ω)
102
10
006aad219
(1)
(2)
1
10-1
(3)
10-2
-10-1
-1
-10 -102 -103 -104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB= 10
Fig. 17. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS5160PAP
Product data sheet
All information provided in this document is subject to legal disclaimers.
23 January 2013
© NXP B.V. 2013. All rights reserved
12 / 17
Free Datasheet http://www.datasheet4u.com/

12 Page





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