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What is PBSS5230QA?

This electronic component, produced by the manufacturer "NXP Semiconductors", performs the same function as "PNP low VCEsat (BISS) transistor".


PBSS5230QA Datasheet PDF - NXP Semiconductors

Part Number PBSS5230QA
Description PNP low VCEsat (BISS) transistor
Manufacturers NXP Semiconductors 
Logo NXP Semiconductors Logo 


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PBSS5230QA
30 V, 2 A PNP low VCEsat (BISS) transistor
23 August 2013
Product data sheet
1. General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
and solderable side pads.
NPN complement: PBSS4230QA.
2. Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
High energy efficiency due to less heat generation
Reduced Printed-Circuit Board (PCB) area requirements
Solderable side pads
AEC-Q101 qualified
3. Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
4. Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current tp ≤ 1 ms; pulsed
collector-emitter
saturation resistance
IC = -1 A; IB = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - -30 V
- - -2 A
- - -3 A
- 120 180 mΩ
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PBSS5230QA equivalent
NXP Semiconductors
PBSS5230QA
30 V, 2 A PNP low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
10 0.02
0.01
aaa-007845
0
1
10-5
10-4
10-3
10-2
10-1
FR4 PCB, single-sided copper, standard footprint
1
10 102 103
tp (s)
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 aaa-007846
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
10
10-1
10-5
10-4
10-3
10-2
FR4 PCB, single-sided copper, 1 cm2
10-1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS5230QA
Product data sheet
All information provided in this document is subject to legal disclaimers.
23 August 2013
© NXP N.V. 2013. All rights reserved
5 / 17
Free Datasheet http://www.datasheet4u.com/


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Featured Datasheets

Part NumberDescriptionMFRS
PBSS5230QAThe function is PNP low VCEsat (BISS) transistor. NXP SemiconductorsNXP Semiconductors

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