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PDF 3DD13003B Data sheet ( Hoja de datos )
| Número de pieza | 3DD13003B | |
| Descripción | NPN Plastic-Encapsulated Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
3DD13003B
1.5A , 700V
NPN Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Power switching applications
Collector
2
3
Base
1
Emitter
TO-92
AD
B
E CF
GH
1Emitter
2Collector
3Base
J
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
700
400
9
1.5
900
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Condition
Collector to Base Breakdown Voltage
V(BR)CBO
700
-
-
V IC=1mA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO 400
-
-
V IC=10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
9
-
-
V IE=1mA, IC=0
Collector Cut – Off Current
ICBO - - 100 µA VCB=700V, IE=0
ICEO 50 VCE=400V, IB=0
Emitter Cut – Off Current
IEBO - - 10 µA VEB=7V, IC=0
DC Current Gain
hFE 20 - 30
VCE=10V, IC=400mA
Collector to Emitter Saturation Voltage
VCE(sat)1
VCE(sat)2
-
-
- 3 V IC=1.5A, IB=500mA
- 0.8
IC=0.5A, IB=100mA
Base to Emitter Saturation Voltage
VBE(sat)
-
-
1 V IC=0.5A, IB=100mA
Transition Frequency
fT 4 - - MHz VCE=10V, IC=100mA, f =1MHz
Storage time
tS - - 4 µs IB1= -IB2=0.2A
Fall time
tF - - 0.7 µs IC=1A
http://www.SeCoSGmbH.com/
15-Jun-2011 Rev. A
Any changes of specification will not be informed individually.
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