WEITRON
NPN Plastic-Encapsulate Transistor
P b Lead(Pb)-Free
FEATURES :
• power switching applications
3DD13003B
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Value
700
400
9
1.5
0.9
150
-55 to +150
Units
V
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition Frequency
Fall time
Storage time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
I CBO
ICEO
IEBO
hFE
V CE(sat)1
VCE(sat)2
V BE(sat)
fT
tf
ts
Test conditions
IC= 1mA, IE=0
IC= 10mA, IB=0
IE= 1mA, IC=0
VCB= 700V, IE=0
VCE= 400V, IB=0
VEB= 7V, IC=0
VCE= 10V, IC= 0.4 A
IC=1.5A,IB= 0.5A
IC=0.5A, IB= 0.1A
IC=0.5A, IB=0.1A
VCE=10V,IC=100mA,
f =1MHz
IC=1A
IB1=-IB2=0.2A
MIN
700
400
9
20
4
TYP
MAX
100
50
10
40
3
0.8
1
0.7
4
Units
V
V
V
µA
µA
µA
V
V
V
MHz
µs
µs
CLASSIFICATION OF hFE
Rank
Range
20-25
25-30
30-35
35-40
WEITRON
hpp://www.weitron.com.tw
1/3
10-Nov-2010
Free Datasheet http://www.datasheet4u.com/