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PDF AON6970 Data sheet ( Hoja de datos )
| Número de pieza | AON6970 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
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Hay una vista previa y un enlace de descarga de AON6970 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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AON6970
30V Dual Asymmetric N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100% UIS Tested
100% Rg Tested
Q1
30V
58A
<5.4mΩ
<8.5mΩ
Q2
30V
85A
<1.5mΩ
<2.3mΩ
DFN5X6D
Top View
Bottom View
Top View
Bottom View
G2
S2
S2
S2 PHASE
(S1/D2)
PIN1
D1
D1 G1
D1 D1
PIN1
PHASE
S1/D2
Q2: SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
D1 S1/D2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
±20
Continuous Drain
Current
TC=25°C
TC=100°C
ID
58
36
85
66
Pulsed Drain Current C
IDM 135 340
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.05mH C
IDSM
IAS
EAS
24
19
35
31
42
33
65
106
VDS Spike
100ns
VSPIKE
36
36
TC=25°C
Power Dissipation B TC=100°C
PD
31
12
78
31
TA=25°C
Power Dissipation A TA=70°C
PDSM
5
3.2
4.1
2.6
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Units
V
V
A
A
A
mJ
V
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ Q1
20
50
3.3
Typ Q2
25
56
1.2
Max Q1
25
60
4
Max Q2
30
67
1.6
Units
°C/W
°C/W
°C/W
Rev0 : Sep 2012
www.aosmd.com
Page 1 of 10
Free Datasheet http://www.datasheet4u.com/
1 page  
AON6970
Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
20
10
0
0 25 50 75 100 125 150
TCASE (°C)
Figure 12: Power De-rating (Note F)
10000
1000
70
60
50
40
30
20
10
0
0 25 50 75 100 125
TCASE (°C)
Figure 13: Current De-rating (Note F)
150
TA=25°C
100
10
1
0.00001
0.001
0.1
10
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
1000
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.0001
Single Pulse
PD
Ton
T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Rev0 : Sep 2012
www.aosmd.com
Page 5 of 10
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet AON6970.PDF ] | |
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