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Número de pieza | AON6444 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Freescale | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AON6444 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! AON6444
60V N-Channel MOSFET
SDMOS TM
General Description
The AON6444 is fabricated with SDMOS TM trench technology that combines excellent R DS(ON) with low gate
charge.The result is outstanding efficiency with co ntrolled switching behavior. This universal technology is we ll
suited for PWM, load switching and general purpose applications.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
60V
81A
< 6.5mΩ
< 8mΩ
100% UIS Tested
100% Rg Tested
Top View
18
27
36
45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
60
±20
81
51
170
14
11
58
168
83
33
2.3
1.4
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
14
40
1
Max
17
55
1.5
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1/7 www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
1 page AON6444
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
120
TA=25°C
90 TA=100°C
60
TA=150°C
30
TA=125°C
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
90
80
70
60
50
40
30
20
10
0
0
81A
25 50 75 100 125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
100
80
60
40
20
0
0
10
1
10000
1000
100
10
TA=25°C
17
5
2
10
25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
1
0.0001
0.01
1
100 10000
0
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.0001
PD
Single Pulse
Ton
T
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
1000
5/7 www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet AON6444.PDF ] |
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