PBSS4230PAN Datasheet PDF - NXP Semiconductors
| Part Number | PBSS4230PAN | |
| Description | NPN/NPN low VCEsat (BISS) transistor | |
| Manufacturers | NXP Semiconductors | |
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PBSS4230PAN
30 V, 2 A NPN/NPN low VCEsat (BISS) transistor
14 December 2012
Product data sheet
1. General description
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless
medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4230PANP. PNP/PNP complement: PBSS5230PAP.
2. Features and benefits
• Very low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
• Reduced Printed-Circuit Board (PCB) requirements
• High efficiency due to less heat generation
• AEC-Q101 qualified
3. Applications
• Load switch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO
collector-emitter
voltage
IC collector current
ICM peak collector current
Per transistor
RCEsat
collector-emitter
saturation resistance
Conditions
open base
single pulse; tp ≤ 1 ms
IC = 1 A; IB = 0.1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - 30 V
- - 2A
- - 3A
- - 145 mΩ
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NXP Semiconductors
PBSS4230PAN
30 V, 2 A NPN/NPN low VCEsat (BISS) transistor
Symbol
Per device
Rth(j-a)
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Min Typ Max Unit
[1] - - 245 K/W
[2] - - 160 K/W
[3] - - 171 K/W
[4] - - 130 K/W
[5] - - 202 K/W
[6] - - 120 K/W
[7] - - 130 K/W
[8] - - 63 K/W
[1] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated, mounting pad for
collector 1 cm2.
[3] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated and standard footprint.
[4] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm2.
[5] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated and standard footprint.
[6] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated, mounting pad for
collector 1 cm2.
[7] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated and standard footprint.
[8] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm2.
103 006aad166
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10-5
10-4
10-3
10-2
FR4 PCB 35 µm, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 2. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS4230PAN
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 December 2012
© NXP B.V. 2012. All rights reserved
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| Information | Total 17 Pages | |
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