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PDF PBSS4160PANP Data sheet ( Hoja de datos )
| Número de pieza | PBSS4160PANP | |
| Descripción | NPN/NPN low VCEsat (BISS) transistor | |
| Fabricantes | NXP Semiconductors | |
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PBSS4160PANP
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
14 January 2013
Product data sheet
1. General description
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless
medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/NPN complement: PBSS4160PAN. PNP/PNP complement: PBSS5160PAP.
2. Features and benefits
• Very low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
• Reduced Printed-Circuit Board (PCB) requirements
• High efficiency due to less heat generation
• AEC-Q101 qualified
3. Applications
• Load switch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor; for the PNP transistor with negative polarity
VCEO
collector-emitter
voltage
open base
IC collector current
ICM peak collector current single pulse; tp ≤ 1 ms
TR1 (NPN)
RCEsat
collector-emitter
saturation resistance
IC = 0.5 A; IB = 50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - 60 V
- - 1A
- - 1.5 A
- - 240 mΩ
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1 page  
NXP Semiconductors
PBSS4160PANP
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
Symbol
Per device
Rth(j-a)
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Min Typ Max Unit
[1] - - 245 K/W
[2] - - 160 K/W
[3] - - 171 K/W
[4] - - 130 K/W
[5] - - 202 K/W
[6] - - 120 K/W
[7] - - 130 K/W
[8] - - 63 K/W
[1] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated, mounting pad for
collector 1 cm2.
[3] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated and standard footprint.
[4] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm2.
[5] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated and standard footprint.
[6] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated, mounting pad for
collector 1 cm2.
[7] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated and standard footprint.
[8] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm2.
103 006aad166
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10-5
10-4
10-3
10-2
FR4 PCB 35 µm, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 2. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS4160PANP
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 January 2013
© NXP B.V. 2013. All rights reserved
5 / 21
Free Datasheet http://www.datasheet4u.com/
5 Page 
NXP Semiconductors
PBSS4160PANP
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
Symbol
VBEon
td
tr
ton
ts
tf
toff
fT
Cc
800
hFE
600
400
200
Parameter
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
Conditions
IC = -1 A; IB = -50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = -1 A; IB = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCE = -2 V; IC = -0.5 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCC = -10 V; IC = -0.5 A; IBon = -25 mA;
IBoff = 25 mA; Tamb = 25 °C
VCE = -10 V; IC = -50 mA; f = 100 MHz;
Tamb = 25 °C
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
Min Typ Max Unit
- - -1 V
- - -1.1 V
- - -0.9 V
- 15 -
- 40 -
- 55 -
- 95 -
- 40 -
- 135 -
65 125 -
ns
ns
ns
ns
ns
ns
MHz
-
9.5 13
pF
006aad204
1.50
006aad205
IC IB = 15 mA 13.5 12 10.5
(A)
(1)
1.00 9
7.5
(2) 6
0.75
4.5
3
0.50
(3) 1.5
0.25
0
10-1
1
10 102 103 104
IC (mA)
VCE = 2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 10. TR1 (NPN): DC current gain as a function of
collector current; typical values
0
012345
VCE (V)
Tamb = 25 °C
Fig. 11. TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
PBSS4160PANP
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 January 2013
© NXP B.V. 2013. All rights reserved
11 / 21
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
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