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PBSS4112PAN Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer PBSS4112PAN
Beschreibung NPN/NPN low VCEsat (BISS) transistor
Hersteller NXP Semiconductors
Logo NXP Semiconductors Logo 




Gesamt 17 Seiten
PBSS4112PAN Datasheet, Funktion
PBSS4112PAN
120 V, 1 A NPN/NPN low VCEsat (BISS) transistor
29 November 2012
Product data sheet
1. Product profile
1.1 General description
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless
medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/PNP complement: PBSS4112PANP. PNP/PNP complement: PBSS5112PAP.
1.2 Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
Reduced Printed-Circuit Board (PCB) requirements
High energy efficiency due to less heat generation
AEC-Q101 qualified
1.3 Applications
Load switch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per transistor
VCEO
collector-emitter
voltage
IC collector current
ICM peak collector current
Per transistor
RCEsat
collector-emitter
saturation resistance
Conditions
open base
single pulse; tp ≤ 1 ms
IC = 500 mA; IB = 50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - 120 V
- - 1A
- - 1.5 A
- - 240 mΩ
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PBSS4112PAN Datasheet, Funktion
NXP Semiconductors
PBSS4112PAN
120 V, 1 A NPN/NPN low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W) duty cycle = 1
0.75
102
0.33
0.5
0.2
0.1
10
0.05
0.02 0.01
006aad167
0
1
10-5
10-4
10-3
10-2
10-1
FR4 PCB 35 µm, mounting pad for collector 1 cm2
1
10 102 103
tp (s)
Fig. 3. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
103 006aad168
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
10
0.02
0.05
0.01
0
1
10-5
10-4
10-3
10-2
4-layer PCB 35 µm, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 4. Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS4112PAN
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 November 2012
© NXP B.V. 2012. All rights reserved
6 / 17
Free Datasheet http://www.datasheet4u.com/

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PBSS4112PAN pdf, datenblatt
NXP Semiconductors
103
RCEsat
(Ω)
102
aaa-005719
PBSS4112PAN
120 V, 1 A NPN/NPN low VCEsat (BISS) transistor
103
RCEsat
(Ω)
102
aaa-005720
10
1 (1)
(2)
(3)
10-1
10-1
1
10 102 103 104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 16. Collector-emitter saturation resistance as a
function of collector current; typical values
10
(1)
1 (2)
(3)
10-1
10-1
1
10 102 103 104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig. 17. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS4112PAN
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 November 2012
© NXP B.V. 2012. All rights reserved
12 / 17
Free Datasheet http://www.datasheet4u.com/

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